|
|
PDF DSEC16-06A Data sheet ( Hoja de datos )
| Número de pieza | DSEC16-06A | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de DSEC16-06A (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
|
No Preview Available !
HiPerFRED
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DSEC16-06A
1 23
DSEC16-06A
VRRM
I FAV
t rr
= 600 V
= 2x 10 A
= 30 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120705b
1 page  
DSEC16-06A
Fast Diode
30
25
20
IF
15
[A]
10
TVJ = 150°C
TVJ = 100°C
TVJ = 25°C
5
1.4
1.2 TVJ = 100°C
VR = 300 V
1.0
0.8
Qr
0.6
[μC]
0.4
IF = 20 A
IF = 10 A
IF = 5 A
0.2
40
30
IRM
20
[A]
TVJ = 100°C
VR = 300 V
IF = 20 A
IF = 10 A
IF = 5 A
10
0
0.0 0.5 1.0 1.5 2.0
VF [V]
Fig. 1 Forward current
IF versus VF
2.5
0.0
100
1000
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qr versus -diF /dt
0
0 200 400 600 800 1000
-diF /dt [A/μs]
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
2.0
1.5
Kf 1.0
IRM
0.5
120
110
100
trr
90
[ns]
80
TVJ = 100°C
VR = 300 V
IF = 20 A
IF = 10 A
IF = 5 A
0.0
0
Qr
40
80 120 160
TVJ [°C]
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
70
0 200 400 600 800
-diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
1000
20
TVJ = 100°C
IF = 10 A
15
1.2
0.9
VFR
10
[V]
5
VFR
tfr
0.6
[μs]
0.3
trr
0 0.0
0 200 400 600 800 1000
-diF /dt [A/μs]
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
10
1
ZthJC
0.1
[K/W]
0.01
Constants for ZthJC calculation:
i
Rthi [K/W]
ti [s]
1 1.449
0.0052
2
0.5578
0.0003
3
0.4931
0.0169
0.001
0.00001
0.0001
0.001
0.01
t [s]
Fig. 7 Transient thermal impedance junction to case
0.1
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20120705b
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DSEC16-06A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| DSEC16-06A | High Performance Fast Recovery Diode | IXYS |
| DSEC16-06AC | (DSEA16-06AC / DSEC16-06AC) HiPerDynFREDTM Epitaxial Diode ISOPLUS220TM |  IXYS Corporation |
| DSEC16-06BC | (DSEA16-06BC / DSEC16-06BC) HiPerDynFRED Epitaxial Diode ISOPLUS220 | IXYS Corporation |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |