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PDF HMC7911 Data sheet ( Hoja de datos )
| Número de pieza | HMC7911 | |
| Descripción | I/Q Upconverter | |
| Fabricantes | Analog Devices | |
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Data Sheet
FEATURES
Conversion gain: 18 dB typical
Sideband rejection: 30 dBc typical
Input power for 1 dB compression (P1dB): 2 dBm typical
Output third-order intercept (OIP3): 33 dBm typical
2× local oscillator (LO) leakage at RFOUT: 10 dBm typical
2× LO leakage at the IF input: −25 dBm typical
RF return loss: 13 dB typical
LO return loss: 10 dB typical
32-lead, 5 mm × 5 mm LFCSP package
APPLICATIONS
Point to point and point to multipoint radios
Military radars, electronic warfare (EW), and electronic
intelligence (ELINT)
Satellite communications
Sensors
17.0 GHz to 20.0 GHz,
GaAs, MMIC, I/Q Upconverter
HMC7911
GENERAL DESCRIPTION
The HMC7911 is a compact gallium arsenide (GaAs), pseudo-
morphic (pHEMT), monolithic microwave integrated circuit
(MMIC) upconverter in a RoHS compliant, low stress, injection
molded plastic LFCSP package that operates from 17 GHz to
20 GHz. This device provides a small signal conversion gain of
18 dB with 30 dBc of sideband rejection. The HMC7911 uses a
variable gain amplifier preceded by an in-phase/quadrature (I/Q)
mixer that is driven by an active 2× local oscillator (LO) multiplier.
IF1 and IF2 mixer inputs are provided, and an external 90° hybrid
is needed to select the required sideband. The I/Q mixer topology
reduces the need for filtering of the unwanted sideband. The
HMC7911 is a much smaller alternative to hybrid style single
sideband (SSB) upconverter assemblies, and it eliminates the
need for wire bonding by allowing the use of surface-mount
manufacturing techniques.
FUNCTIONAL BLOCK DIAGRAM
32 31 30 29 28 27 26 25
VGMIX 1
NIC 2
NIC 3
NIC 4
NIC 5
GND 6
LOIN 7
GND 8
HMC7911
2×
24 NIC
23 NIC
22 VDRF2
21 VCTL1
20 VCTL2
19 VDRF3
18 VDRF4
17 NIC
9 10 11 12 13 14 15 16
EPAD
Figure 1.
Rev. 0
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rights of third parties that may result from its use. Specifications subject to change without notice. No
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One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A.
Tel: 781.329.4700
©2016 Analog Devices, Inc. All rights reserved.
Technical Support
www.analog.com
1 page  
Data Sheet
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
HMC7911
32 31 30 29 28 27 26 25
VGMIX 1
NIC 2
NIC 3
NIC 4
NIC 5
GND 6
LOIN 7
GND 8
HMC7911
TOP VIEW
(Not to Scale)
24 NIC
23 NIC
22 VDRF2
21 VCTL1
20 VCTL2
19 VDRF3
18 VDRF4
17 NIC
9 10 11 12 13 14 15 16
EPAD
NOTES
1. NIC = NOT INTERNALLY CONNECTED. NO CONNECTION IS REQUIRED.
THESE PINS ARE NOT CONNECTED INTERNALLY. HOWEVER, ALL DATA
SHOWN HEREIN WERE MEASURED WITH THESE PINS CONNECTED
EXTERNALLY TO RF/DC GROUND.
2. EXPOSED PAD. CONNECT TO A LOW IMPEDANCE THERMAL AND
ELECTRICAL GROUND PLANE.
Figure 2. Pin Configuration
Table 4. Pin Function Descriptions
Pin No.
Mnemonic Description
1 VGMIX
2, 3, 4, 5, 16, 17,
23, 24, 29, 31,
32
6, 8, 13, 15
7
9, 10
NIC
GND
LOIN
VDLO1, VDLO2
Gate Voltage for FET Mixer. See Figure 3. Refer to the typical application circuit for the required external
components (see Figure 83).
Not Internally Connected. No connection is required. These pins are not connected internally. However, all
data shown herein were measured with these pins connected externally to RF/dc ground.
Ground Connect. See Figure 4. These pins and package bottom must be connected to RF/dc ground.
Local Oscillator Input. See Figure 5. This pin is dc-coupled and matched to 50 Ω.
Power Supply Voltage for LO Amplifier. See Figure 6. Refer to the typical application circuit for the required
external components (see Figure 83).
11
12
14
18, 19, 22, 25
20, 21
26
VREF
VDET
RFOUT
VDRF4, VDRF3,
VDRF2, VDRF1
VCTL2, VCTL1
VGRF
Reference Voltage for the Power Detector. See Figure 7. VREF is the dc bias of the diode biased through the
external resistor used for temperature compensation of VDET. Refer to the typical application circuit for the
required external components (see Figure 83).
Detector Voltage for the Power Detector. See Figure 8. VDET is the dc voltage representing the RF output
power rectified by diode, which is biased through an external resistor. Refer to the typical application
circuit for the required external components (see Figure 83).
Radio Frequency Output. See Figure 9. This pin is dc-coupled and matched to 50 Ω.
Power Supply Voltage for the Variable Gain Amplifier. See Figure 10. Refer to the typical application circuit
for the required external components (see Figure 83).
Gain Control Voltage for the Variable Gain Amplifier. See Figure 11. Refer to the typical application circuit
for the required external components (see Figure 83).
Gate Voltage for the Variable Gain Amplifier. See Figure 12. Refer to the typical application circuit for the
required external components (see Figure 83).
27 VESD DC Voltage for ESD Protection. See Figure 13. Refer to the typical application circuit for the required
external components (see Figure 83).
28, 30
IF1, IF2
EPAD
Quadrature IF Inputs. See Figure 14. For applications not requiring operation to dc, use an off chip dc
blocking capacitor. For operation to dc, these pins must not source/sink more than ±3 mA of current or
device malfunction and failure may result.
Exposed Pad. Connect to a low impedance thermal and electrical ground plane.
Rev. 0 | Page 5 of 24
5 Page 
Data Sheet
HMC7911
Data taken as SSB upconverter with external IF 90° hybrid at the IF ports, IF = 2 GHz.
25
23
TA = +85°C
21 TA = +25°C
TA = –40°C
19
17
15
13
11
9
7
5
17.0 17.5 18.0 18.5 19.0 19.5 20.0
RF FREQUENCY (GHz)
Figure 39. Input IP3 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
40
38
36
34
32
30
28
26 TA = +85°C
TA = +25°C
24 TA = –40°C
22
20
17.0 17.5 18.0 18.5 19.0 19.5 20.0
RF FREQUENCY (GHz)
Figure 42. Output IP3 vs. RF Frequency at Various Temperatures,
LO = 4 dBm
25
23
21
19
17
15
13
11 LO = 2dBm
LO = 4dBm
9 LO = 6dBm
7
5
17.0 17.5 18.0 18.5 19.0 19.5 20.0
RF FREQUENCY (GHz)
Figure 40. Input IP3 vs. RF Frequency at Various LO Powers
40
38
36
34
32
30
28
26 LO = 2dBm
LO = 4dBm
24 LO = 6dBm
22
20
17.0 17.5 18.0 18.5 19.0 19.5 20.0
RF FREQUENCY (GHz)
Figure 43. Output IP3 vs. RF Frequency at Various LO Powers
32
VCTLx = –5V
VCTLx = –3.5V
VCTLx = –2V
30
28
VCTLx = –4.8V
VCTLx = –4.5V
VCTLx = –4.3V
VCTLx = –4V
VCTLx = –3.3V
VCTLx = –3V
VCTLx = –2.8V
VCTLx = –2.5V
VCTLx = –1.8V
VCTLx = –1.5V
VCTLx = –1.3V
VCTLx = –1V
26
VCTLx = –3.8V
VCTLx = –2.3V
24
22
20
18
16
14
12
10
17.0 17.5 18.0 18.5 19.0 19.5 20.0
RF FREQUENCY (GHz)
Figure 41. Input IP3 vs. RF Frequency at Various Control Voltages,
LO = 4 dBm
52
VCTLx = –5V
VCTLx = –3.5V
VCTLx = –2V
48
44
40
VCTLx = –4.8V
VCTLx = –4.5V
VCTLx = –4.3V
VCTLx = –4V
VCTLx = –3.8V
VCTLx = –3.3V
VCTLx = –3V
VCTLx = –2.8V
VCTLx = –2.5V
VCTLx = –2.3V
VCTLx = –1.8V
VCTLx = –1.5V
VCTLx = –1.3V
VCTLx = –1V
36
32
28
24
20
16
12
8
4
0
17.0 17.5 18.0 18.5 19.0 19.5 20.0
RF FREQUENCY (GHz)
Figure 44. Output IP3 vs. RF Frequency at Various Control Voltages,
LO = 4 dBm
Rev. 0 | Page 11 of 24
11 Page | ||
| Páginas | Total 24 Páginas | |
| PDF Descargar | [ Datasheet HMC7911.PDF ] | |
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