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Número de pieza | DSA90C200HR | |
Descripción | Schottky Diode | |
Fabricantes | IXYS | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de DSA90C200HR (archivo pdf) en la parte inferior de esta página. Total 5 Páginas | ||
No Preview Available ! Schottky Diode Gen ²
High Performance Schottky Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DSA90C200HR
1 23
DSA90C200HR
VRRM
I FAV
VF
= 200 V
= 2x 45 A
= 0.79 V
Backside: isolated
Features / Advantages:
● Very low Vf
● Extremely low switching losses
● Low Irm values
● Improved thermal behaviour
● High reliability circuit operation
● Low voltage peaks for reduced
protection circuits
● Low noise switching
Applications:
● Rectifiers in switch mode power
supplies (SMPS)
● Free wheeling diode in low voltage
converters
Package: ISO247
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Backside: DCB ceramic
● Reduced weight
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130909b
1 page DSA90C200HR
Schottky
100
100
10000
TVJ=175°C
10
150°C
IF
10
[A]
TVJ =
175°C
125°C
25°C
IR
1
125°C
[mA]
0.1 100°C
75°C
0.01
50°C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VF [V]
Fig. 1 Max. forward voltage
drop characteristics
0.001
0
25°C
50
100 150
VR [V]
Fig. 2 Typ. reverse current
IR vs. reverse voltage VR
CT
1000
[pF]
100
0
TVJ = 25°C
50 100 150
VR [V]
Fig. 3 Typ. junction capacitance
CT vs. reverse voltage VR
80
60
60
IF(AV)
40
[A]
20
d = 0.5 DC
50
P(AV) 40
30
[W]
20
10
d=
DC
0.5
0.33
0.25
0.17
0.08
0
0 40 80 120 160
TC [°C]
Fig. 4 Avg. forward current
IF(AV) vs. case temp. TC
0
0 10 20 30 40 50 60 70
IF(AV) [A]
Fig. 5 Forward power loss
characteristics
1
ZthJH
0.1
[K/W]
Rthi
0.041
0.087
0.258
0.486
0.078
ti
0.0002
0.0065
0.037
0.182
2.43
0.01
0.001
0.01
0.1
t [s]
1
Fig. 6 Transient thermal impedance junction to heatsink
Note: All curves are per diode
10
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130909b
5 Page |
Páginas | Total 5 Páginas | |
PDF Descargar | [ Datasheet DSA90C200HR.PDF ] |
Número de pieza | Descripción | Fabricantes |
DSA90C200HB | Schottky Diode Gen | IXYS |
DSA90C200HR | Schottky Diode | IXYS |
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