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IXYS - Silicon Carbide Schottky Rectifier Bridge

Numéro de référence FBS10-06SC
Description Silicon Carbide Schottky Rectifier Bridge
Fabricant IXYS 
Logo IXYS 





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FBS10-06SC fiche technique
Advanced Technical Information
FBS 10-06SC
Silicon Carbide
Schottky Rectifier Bridge
in ISOPLUS i4-PAC™
VRRM = 600 V
IdAVM = 6.6 A
Cjunction = 9 pF
1
4
5
1
5
2
Rectifier Bridge
Symbol Conditions
VRRM
IFAV
ID(AV)M
IFSM
Ptot
TC = 90°C; sine 180°
(per diode)
TC = 90°C
TC = 25°C; t = 10 ms; sine 50 Hz
TC = 25°C
(per diode)
Maximum Ratings
600 V
3A
6.6 A
12 A
19 W
Symbol Conditions
VF
IR
CJ
RthJC
RthJS
IF = 4 A
VR = VRRM
VR = 400 V
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
TVJ = 25°C
TVJ = 125°C
TVJ = 25°C
TVJ = 125°C
TVJ = 125°C
(per diode)
1.7 2.0
1.9
V
V
0.2 mA
0.04 mA
9 pF
8 K/W
11.5 K/W
Features
• Silicon Carbide Schottky Diodes
- no reverse recovery at turn off
- only charge of junction capacity
- soft turn off waveform
- no forward recovery at turn on
- switching behaviour independent of
temperature
- low leakage current
• ISOPLUS i4-PAC™ package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- high reliability
- industry standard outline
Applications
• output rectifiers of high end switch
mode power supplies
• other high frequency rectifiers
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080602a
-2

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