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PDF FBS10-12SC Data sheet ( Hoja de datos )
| Número de pieza | FBS10-12SC | |
| Descripción | Silicon Carbide Schottky Rectifier Bridge | |
| Fabricantes | IXYS | |
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Silicon Carbide
Schottky
Rectifier Bridge
in ISOPLUS i4-PACTM
Advanced Technical Information
FBS 10-12SC
VRRM = 1200 V
ID(AV)M = 7 A
1
4
51
25
Rectifier Bridge
Symbol
VRRM
IFAV
ID(AV)M
IFSM
Ptot
Conditions
TC = 90°C; sine 180° (per diode)
TC = 90°C
(bridge)
TVJ = 25°C; t = 10 ms; sine 50 Hz
TC = 25°C
(per diode)
Maximum Ratings
1200
V
3A
7A
12 A
37 W
Symbol
Conditions
Characteristic Values
(T
VJ
=
25°C,
unless
otherwise
specified)
min. typ. max.
VF
IR
RthJC
RthJS
IF = 4 A;
TVJ = 25°C
TVJ = 125°C
VR = VRRM;
TVJ = 25°C
TVJ = 125°C
(per diode)
1.7 2.1 V
2.4 V
0.2 mA
0.04 mA
4.1 K/W
6.2 K/W
Data according to IEC 60747 referring to a single diode unless otherwise stated.
Features
• Silicon Carbide Schottky Diodes
- no reverse recovery at turn off - only
charge of junction capacity - soft turn
off waveform
- no forward recovery at turn on
- switching behaviour independent of
temperature
- low leakage current
• ISOPLUS i4-PACTM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- high reliability
- industry standard outline
- UL registered E72873
Applications
• output rectifiers of high end switched
mode power supplies
• other high frequency rectifiers
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
1-2
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet FBS10-12SC.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| FBS10-12SC | Silicon Carbide Schottky Rectifier Bridge | IXYS |
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