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PDF STD80N4F6 Data sheet ( Hoja de datos )
| Número de pieza | STD80N4F6 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STD80N4F6,
STU80N4F6
N-channel 40 V, 5.5 mΩ typ., 80 A STripFET™ VI DeepGATE™
Power MOSFET in DPAK and IPAK packages
Datasheet − production data
Features
TAB
3
1
DPAK
TAB
IPAK
3
2
1
Figure 1. Internal schematic diagram
$ 4!"
'
Order codes
STD80N4F6
STU80N4F6
VDS
40 V
RDS(on) max ID
6.0 mΩ
6.3 mΩ
80 A
• Low gate charge
• Very low on-resistance
• High avalanche ruggedness
Applications
• Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFETs exhibits
the lowest RDS(on) in all packages.
3
!-V
Order codes
STD80N4F6
STU80N4F6
Table 1. Device summary
Marking
Package
80N4F6
DPAK
IPAK
March 2013
This is information on a product in full production.
DocID023839 Rev 3
Packaging
Tape and reel
Tube
1/18
www.st.com
18
1 page  
STD80N4F6, STU80N4F6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD Source-drain current
- 80 A
ISDM (1) Source-drain current (pulsed)
- 320 A
VSD (2) Forward on voltage
ISD = 40 A, VGS = 0
-
1.3 V
trr Reverse recovery time
- 41.1
Qrr Reverse recovery charge
ISD = 80 A, di/dt = 100 A/µs
VDD = 32 V (see Figure 17)
-
43.6
IRRM Reverse recovery current
- 2.1
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID023839 Rev 3
5/18
5 Page 
STD80N4F6, STU80N4F6
Package mechanical data
Figure 19. DPAK (TO-252) drawing
DocID023839 Rev 3
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11 Page | ||
| Páginas | Total 18 Páginas | |
| PDF Descargar | [ Datasheet STD80N4F6.PDF ] | |
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