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Numéro de référence | TMP10N60G | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | TRinno | ||
Logo | |||
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP10N60/TMPF10N60
TMP10N60G/TMPF10N60G
VDSS = 660 V @Tjmax
ID = 10A
RDS(on) = 0.75 W(max) @ VGS= 10 V
D
G
S
Device
TMP10N60 / TMPF10N60
TMP10N60G / TMPF10N60G
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP10N60 / TMPF10N60
TMP10N60G / TMPF10N60G
Remark
RoHS
Halogen Free
Symbol
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP10N60(G) TMPF10N60(G)
600
±30
10 10*
6.5 6.5*
40 40*
758
10
19.8
198 52
1.58 0.41
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP10N60(G)
0.63
62.5
May 2010 : Rev1
www.trinnotech.com
TMPF10N60(G)
2.4
62.5
Unit
℃/W
℃/W
1/5
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Pages | Pages 5 | ||
Télécharger | [ TMP10N60G ] |
No | Description détaillée | Fabricant |
TMP10N60 | Power MOSFET ( Transistor ) | TRinno |
TMP10N60A | N-channel MOSFET | TRinno |
TMP10N60AG | N-channel MOSFET | TRinno |
TMP10N60G | Power MOSFET ( Transistor ) | TRinno |
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