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Numéro de référence | TMP10N80 | ||
Description | N-channel MOSFET | ||
Fabricant | TRinno | ||
Logo | |||
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP10N80/TMPF10N80
TMP10N80G/TMPF10N80G
VDSS = 880 V @Tjmax
ID = 9.5A
RDS(ON) = 1.05 W(max) @ VGS= 10 V
D
G
Device
TMP10N80 / TMPF10N80
TMP10N80G / TMPF10N80G
Package
TO-220 / TO-220F
TO-220 / TO-220F
S
Marking
TMP10N80 / TMPF10N80
TMP10N80G / TMPF10N80G
Remark
RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
November 2014 : Rev1.1
Symbol
RqJC
RqJA
www.trinnotech.com
TMP10N80(G) TMPF10N80(G)
800
±30
9.5 9.5 *
6.4 6.4 *
38 38*
231
9.5
29
290
48
2.32 0.38
4.5
-55~150
300
TMP10N80(G)
0.43
62.5
TMPF10N80(G)
2.6
62.5
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Unit
℃/W
℃/W
1/7
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Pages | Pages 7 | ||
Télécharger | [ TMP10N80 ] |
No | Description détaillée | Fabricant |
TMP10N80 | N-channel MOSFET | TRinno |
TMP10N80G | N-channel MOSFET | TRinno |
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