DataSheetWiki


TMP10N80 fiches techniques PDF

TRinno - N-channel MOSFET

Numéro de référence TMP10N80
Description N-channel MOSFET
Fabricant TRinno 
Logo TRinno 





1 Page

No Preview Available !





TMP10N80 fiche technique
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP10N80/TMPF10N80
TMP10N80G/TMPF10N80G
VDSS = 880 V @Tjmax
ID = 9.5A
RDS(ON) = 1.05 W(max) @ VGS= 10 V
D
G
Device
TMP10N80 / TMPF10N80
TMP10N80G / TMPF10N80G
Package
TO-220 / TO-220F
TO-220 / TO-220F
S
Marking
TMP10N80 / TMPF10N80
TMP10N80G / TMPF10N80G
Remark
RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
November 2014 : Rev1.1
Symbol
RqJC
RqJA
www.trinnotech.com
TMP10N80(G) TMPF10N80(G)
800
±30
9.5 9.5 *
6.4 6.4 *
38 38*
231
9.5
29
290
48
2.32 0.38
4.5
-55~150
300
TMP10N80(G)
0.43
62.5
TMPF10N80(G)
2.6
62.5
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Unit
/W
/W
1/7

PagesPages 7
Télécharger [ TMP10N80 ]


Fiche technique recommandé

No Description détaillée Fabricant
TMP10N80 N-channel MOSFET TRinno
TRinno
TMP10N80G N-channel MOSFET TRinno
TRinno

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche