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TMP16N60A fiches techniques PDF

TRinno - N-channel MOSFET

Numéro de référence TMP16N60A
Description N-channel MOSFET
Fabricant TRinno 
Logo TRinno 





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TMP16N60A fiche technique
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP16N60A(G)/TMPF16N60A(G)
BVDSS
600V
N-channel MOSFET
ID RDS(on)
16A < 0.47W
Device
TMP16N60A / TMPF16N60A
TMP16N60AG / TMPF16N60AG
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP16N60A / TMPF16N60A
TMP16N60AG / TMPF16N60AG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP16N60A(G) TMPF16N60A(G)
600
±30
16 16 *
9.97 9.97 *
64 64 *
194
16
29
290 48
2.32 0.38
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP16N60A(G)
0.43
62.5
December 2014 : Rev0.1
www.trinnotech.com
TMPF16N60A(G)
2.6
62.5
Unit
/W
/W
1/7

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