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Numéro de référence | TMP16N60A | ||
Description | N-channel MOSFET | ||
Fabricant | TRinno | ||
Logo | |||
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP16N60A(G)/TMPF16N60A(G)
BVDSS
600V
N-channel MOSFET
ID RDS(on)
16A < 0.47W
Device
TMP16N60A / TMPF16N60A
TMP16N60AG / TMPF16N60AG
Package
TO-220 / TO-220F
TO-220 / TO-220F
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMP16N60A / TMPF16N60A
TMP16N60AG / TMPF16N60AG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP16N60A(G) TMPF16N60A(G)
600
±30
16 16 *
9.97 9.97 *
64 64 *
194
16
29
290 48
2.32 0.38
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP16N60A(G)
0.43
62.5
December 2014 : Rev0.1
www.trinnotech.com
TMPF16N60A(G)
2.6
62.5
Unit
℃/W
℃/W
1/7
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Pages | Pages 7 | ||
Télécharger | [ TMP16N60A ] |
No | Description détaillée | Fabricant |
TMP16N60 | N-channel MOSFET | TRinno |
TMP16N60A | N-channel MOSFET | TRinno |
TMP16N60AG | N-channel MOSFET | TRinno |
TMP16N60G | N-channel MOSFET | TRinno |
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