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Numéro de référence | 2SD1662 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
2SD1662
DESCRIPTION
·High DC Current Gain
: hFE= 1000(Min.)@ IC= 15A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 100V(Min.)
·Low Collector Saturation Voltage
: VCE(sat) = 1.5V(Max.)@ IC= 15A
APPLICATIONS
·Designed for high current switching application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
100 V
VCEO Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
100 V
5V
IC Collector Current-Continuous
15 A
IB Base Current- Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj Junction Temperature
1A
100 W
150 ℃
Tstg Storage Temperature Range
-55~150 ℃
isc website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ 2SD1662 ] |
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