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Numéro de référence | 2SJ126 | ||
Description | P-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
INCHANGE Semiconductor
isc P-Channel MOSFET Transistor
isc Product Specification
2SJ126
DESCRIPTION
·Low Drain-Source ON Resistance
·High Forward Transfer Admittance
·Low Leakage Current
·Enhancement-Mode
APPLICATIONS
·High speed switching application
·Switching regulator ,DC-DC converter and Motor
drive application
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
-60
±20
V
V
ID Drain Current-continuous@ TC=37℃ -10 A
Ptot Total Dissipation@TC=25℃
40 W
Tj Max. Operating Junction Temperature -55~150 ℃
Tstg Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
Rth j-a Thermal Resistance,Junction to Ambient
3.1 ℃/W
75 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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Pages | Pages 2 | ||
Télécharger | [ 2SJ126 ] |
No | Description détaillée | Fabricant |
2SJ120 | Silicon P-channel MOS FET | Renesas Technology |
2SJ122 | Silicon P-Channel MOS FET | Hitachi |
2SJ125 | FOR LOW FREQUENCY AMPLIFY APPLICATION P CHANNEL JUNCTION TYPE | Isahaya Electronics Corporation |
2SJ126 | P-Channel MOSFET Transistor | Inchange Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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