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Numéro de référence | TMU8N25Z | ||
Description | N-channel MOSFET | ||
Fabricant | TRinno | ||
Logo | |||
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
D-PAK
TMD8N25Z(G)/TMU8N25Z(G)
BVDSS
250V
N-channel MOSFET
ID RDS(on)MAX
8A <0.6W
I-PAK
Device
TMD8N25Z/TMU8N25Z
TMD8N25ZG/TMU8N25ZG
Package
D-PAK/I-PAK
D-PAK/I-PAK
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMD8N25Z/TMU8N25Z
TMD8N25ZG/TMU8N25ZG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMD8N25Z(G)/TMU8N25Z(G)
250
±30
8
3.6
32
147
8
5.2
52
0.41
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
May 2012 : Rev0
www.trinnotech.com
TMD8N25Z(G)/TMU8N25Z(G)
2.4
110
Unit
℃/W
℃/W
1/6
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Pages | Pages 6 | ||
Télécharger | [ TMU8N25Z ] |
No | Description détaillée | Fabricant |
TMU8N25Z | N-channel MOSFET | TRinno |
TMU8N25ZG | N-channel MOSFET | TRinno |
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