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Datasheet TMU8N25ZG-PDF.HTML Equivalent ( PDF )

N.º Número de pieza Descripción Fabricantes Category


TMU Datasheet ( Hoja de datos ) - resultados coincidentes

N.º Número de pieza Descripción Fabricantes Catagory
1TMU16N25ZN-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD16N25Z(G)/TMU16N25Z(G) BVDSS 250V N-channel MOSFET ID RDS(on) 16A <0.24W I-PAK Device TMD16N25Z / TMU16N25Z TMD16N25ZG / TMU16N25ZG
TRinno
TRinno		mosfet
2TMU16N25ZGN-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD16N25Z(G)/TMU16N25Z(G) BVDSS 250V N-channel MOSFET ID RDS(on) 16A <0.24W I-PAK Device TMD16N25Z / TMU16N25Z TMD16N25ZG / TMU16N25ZG
TRinno
TRinno		mosfet
3TMU18N20ZN-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD18N20Z(G)/TMU18N20Z(G) BVDSS 200V N-channel MOSFET ID RDS(on) MAX 18A <0.17W I-PAK Device TMD18N20Z / TMU18N20Z TMD18N20ZG / TMU18N20
TRinno
TRinno		mosfet
4TMU18N20ZGN-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD18N20Z(G)/TMU18N20Z(G) BVDSS 200V N-channel MOSFET ID RDS(on) MAX 18A <0.17W I-PAK Device TMD18N20Z / TMU18N20Z TMD18N20ZG / TMU18N20
TRinno
TRinno		mosfet
5TMU2N60AZN-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD2N60AZ(G)/TMU2N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 2.0A < 4.0W I-PAK Device TMD2N60AZ / TM
TRinno
TRinno		mosfet
6TMU2N60AZGN-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification  Improved ESD performance D-PAK TMD2N60AZ(G)/TMU2N60AZ(G) BVDSS 600V N-channel MOSFET ID RDS(on) 2.0A < 4.0W I-PAK Device TMD2N60AZ / TM
TRinno
TRinno		mosfet
7TMU2N60ZN-channel MOSFET

Features  Low gate charge  100% avalanche tested  Improved dv/dt capability  RoHS compliant  Halogen free package  JEDEC Qualification D-PAK TMD2N60Z(G)/TMU2N60Z(G) BVDSS 600V N-channel MOSFET ID RDS(on)MAX 2A <4.0W I-PAK Device TMD2N60Z / TMU2N60Z TMD2N60ZG / TMU2N60ZG Packa
TRinno
TRinno		mosfet



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Número de pieza Descripción Fabricantes PDF
SPS122

Modern EU gaming Machines require increased +12V current to accommodate the latest gaming peripherals. DC Converters have been engineered with Sanken’s latest technology to efficiently convert redundant power from our lamp gaming PSU and provide additional +12V capacity at the point of use.

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