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TMP18N20Z fiches techniques PDF

TRinno - N-channel MOSFET

Numéro de référence TMP18N20Z
Description N-channel MOSFET
Fabricant TRinno 
Logo TRinno 





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TMP18N20Z fiche technique
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
TMP18N20Z(G)/TMPF18N20Z(G)
BVDSS
200V
N-channel MOSFET
ID RDS(on)MAX
18A <0.17W
Device
TMP18N20Z / TMPF18N20Z
TMP18N20ZG / TMPF18N20ZG
Package
TO-220 / TO-220F
TO-220 / TO-220F
Marking
TMP18N20Z / TMPF18N20Z
TMP18N20ZG / TMPF18N20ZG
Remark
RoHS
Halogen Free
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25
TC = 100
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25
Derate above 25
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMP18N20Z(G) TMPF18N20Z(G)
200
±30
18 18 *
9 9*
72 72 *
380
18
9.4
94 30.4
0.75 0.24
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/
V/ns
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
TMP18N20Z(G)
1.33
62.5
May 2012 : Rev0
www.trinnotech.com
TMPF18N20Z(G)
4.1
62.5
Unit
/W
/W
1/7

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