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PDF TMD18N20ZG Data sheet ( Hoja de datos )
| Número de pieza | TMD18N20ZG | |
| Descripción | N-channel MOSFET | |
| Fabricantes | TRinno | |
| Logotipo |  |
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Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
RoHS compliant
Halogen free package
JEDEC Qualification
D-PAK
TMD18N20Z(G)/TMU18N20Z(G)
BVDSS
200V
N-channel MOSFET
ID RDS(on) MAX
18A <0.17W
I-PAK
Device
TMD18N20Z / TMU18N20Z
TMD18N20ZG / TMU18N20ZG
Package
D-PAK/I-PAK
D-PAK/I-PAK
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Single Pulse Avalanche Energy (Note 2)
Repetitive Avalanche Current (Note 1)
Repetitive Avalanche Energy (Note 1)
Power Dissipation
TC = 25 ℃
Derate above 25 ℃
Peak Diode Recovery dv/dt (Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Marking
TMD18N20Z / TMU18N20Z
TMD18N20ZG / TMU18N20ZG
Remark
RoHS
Halogen Free
Symbol
VDSS
VGS
ID
IDM
EAS
IAR
EAR
PD
dv/dt
TJ, TSTG
TL
TMD18N20Z(G)/TMU18N20Z(G)
200
±30
18
9.5
72
380
18
9.4
94
0.75
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RqJC
RqJA
May 2012 : Rev0
www.trinnotech.com
TMD18N20Z(G)/TMU18N20Z(G)
1.33
110
Unit
℃/W
℃/W
1/6
1 page  
TMD18N20Z(G)/TMU18N20Z(G)
TO-252 (D-PAK) MECHANICAL DATA
May 2012 : Rev0
www.trinnotech.com
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet TMD18N20ZG.PDF ] | |
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