|
|
PDF TGAN20N135FD Data sheet ( Hoja de datos )
| Número de pieza | TGAN20N135FD | |
| Descripción | Field Stop Trench IGBT | |
| Fabricantes | TRinno | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de TGAN20N135FD (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
|
No Preview Available !
Features:
•1350V Field Stop Trench Technology
• High Speed Switching
• Low Conduction Loss
• Positive Temperature Coefficient
• Easy Parallel Operation
• RoHS Compliant
• JEDEC Qualification
Applications :
Induction Heating, Soft Switching Application, UPS, Welder, Inverter
TGAN20N135FD
Field Stop Trench IGBT
E
GC
Device
TGAN20N135FD
Package
TO-3PN
Marking
TGAN20N135FD
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Power Dissipation
Operating Junction Temperature
TC = 25 ℃
TC = 100 ℃
TC = 100 ℃
TC = 25 ℃
TC = 100 ℃
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Symbol
VCES
VGES
Ic
ICM
IF
PD
TJ
TSTG
TL
Notes :
(1) Repetitive rating : Pulse width limited by maximum junction temperature
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT)
RθJC (DIODE)
RθJA
Value
1350
±20
40
20
60
20
223
86
-55 ~ 150
-55 ~ 150
300
Value
0.56
3
40
Remark
RoHS
Unit
V
V
A
A
A
A
W
W
℃
℃
℃
Unit
℃/W
℃/W
℃/W
Dec. 2013 : rev 0.1
www.trinnotech.com
1/8
1 page  
IGBT Characteristics
Fig. 7 Turn-on time vs. gate resistor
TC = 25oC
TC = 125oC
100
td(on)
tr
TGAN20N135FD
Field Stop Trench IGBT
Fig. 8 Turn-off time vs. gate resistor
1000
TC = 25oC
TC = 125oC
td(off)
100
tf
Common Emitter
VCC = 600V, VGE = 15V, IC= 20A
10
0 10 20 30 40 50 60 70
Gate Resistor, R [Ω]
G
Fig. 9 Switching loss vs. gate resistor
10000
TC = 25oC
TC = 125oC
EON
1000
EOFF
Common Emitter
VCC = 600V, VGE = 15V, IC= 20A
10
0 10 20 30 40 50 60 70
Gate Resistor, R [Ω]
G
Fig. 10 Turn-on time vs. collector current
100
TC = 25oC
80 TC = 125oC
60
tr
40
td(on)
100
0
Common Emitter
VCC = 600V, VGE = 15V, IC= 20A
10 20 30 40 50 60 70
Gate Resistor, R [Ω]
G
Fig. 11 Turn-off time vs. collector current
500
400
TC = 25oC
TC = 125oC
300
200
td(off)
tf
100
20
Common Emitter
VCC = 600V, VGE = 15V, RG= 10Ω
10 15 20 25 30 35 40
Collector Current, I [A]
C
Fig. 12 Switching loss vs. collector current
10000
TC = 25oC
TC = 125oC
EON
EOFF
1000
10 15
Dec. 2013 : rev 0.1
Common Emitter
VCC = 600V, VGE = 15V, RG= 10Ω
20 25 30
Collector Current, I [A]
C
35
40
100
5
10
www.trinnotech.com
Common Emitter
VCC = 600V, VGE = 15V, RG= 10Ω
15 20 25 30 35 40 45
Collector Current, I [A]
C
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TGAN20N135FD.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| TGAN20N135FD | Field Stop Trench IGBT | TRinno |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |