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TGAN40N120FDR fiches techniques PDF

TRinno - Field Stop Trench IGBT

Numéro de référence TGAN40N120FDR
Description Field Stop Trench IGBT
Fabricant TRinno 
Logo TRinno 





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TGAN40N120FDR fiche technique
Features
1200V Field Stop Trench Technology
High Speed Switching
Low Conduction Loss
Positive Temperature Coefficient
Easy Parallel Operation
Short Circuit Withstanding Time 5μs
RoHS Compliant
JEDEC Qualification
Applications
UPS, Welder, Inverter, Solar
TGAN40N120FDR
Field Stop Trench IGBT
E
GC
Device
TGAN40N120FDR
Package
TO-3PN
Marking
TGAN40N120FDR
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current (Note 1)
TC = 25
TC = 100
Diode Continuous Forward Current
Power Dissipation
TC = 100
TC = 25
TC = 100
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Symbol
VCES
VGES
IC
ICM
IF
PD
TJ
TSTG
TL
Value
1200
±20
80
40
120
40
500
200
-55 ~ 150
-55 ~ 150
300
Notes :
(1) Repetitive rating : Pulse width limited by maximum junction temperature
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT)
RθJC (DIODE)
RθJA
Value
0.25
0.95
40
July 2015. Rev 0.0
www.trinnotech.com
Remark
RoHS
Unit
V
V
A
A
A
A
W
W
Unit
/W
/W
/W
1/8

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