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PDF TGL60N100ND1 Data sheet ( Hoja de datos )
| Número de pieza | TGL60N100ND1 | |
| Descripción | NPT trench IGBT | |
| Fabricantes | TRinno | |
| Logotipo |  |
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Features:
• 1000V NPT Trench Technology
• High Speed Switching
• Low Conduction Loss
• Positive Temperature Coefficient
• Easy parallel Operation
• RoHS compliant
• JEDEC Qualification
Applications :
Induction Heating, Soft switching application
TGL60N100ND1
NPT trench IGBT
GC E
Device
TGL60N100ND1
Package
TO-264
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Current
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Power Dissipation
Operating Junction Temperature
TC = 25 ℃
TC = 100 ℃
TC = 100 ℃
TC = 25 ℃
TC = 100 ℃
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Marking
TGL60N100ND1
Symbol
VCES
VGES
Ic
ICM
IF
PD
TJ
TSTG
TL
Value
1000
±20
60
42
120
15
463
185
-55 ~ 150
-55 ~ 150
300
Notes :
(1) Repetitive rating : Pulse width limited by max junction temperature
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT)
RθJC (DIODE)
RθJA
Aug. 2012 : Rev1
www.trinnotech.com
Value
0.27
1.59
25
Remark
RoHS
Unit
V
V
A
A
A
A
W
W
℃
℃
℃
Unit
℃/W
℃/W
℃/W
1/8
1 page  
IGBT Characteristics
Fig. 7 Turn on time vs. gate resistance
1000
100
t
r
t
d(on)
10
0
Common Emitter
V = 600V, V = 15V, I = 60A
CC GE C
T = 25oC
C
T = 125oC
C
20 40 60 80
Gate Resistance, R [Ω]
G
100
Fig. 9 Switching loss vs. gate resistance
TGL60N100ND1
NPT trench IGBT
Fig. 8 Turn off time vs. gate resistance
1000
t
d(off)
100
10
0
t
f
Common Emitter
V = 600V, V = 15V, I = 60A
CC GE C
T = 25oC
C
T = 125oC
C
20 40 60 80
Gate Resistance, R [Ω]
G
100
Fig. 10 Turn on time vs. collector current
10000
E
ON
E
OFF
t
d(on)
100
t
r
1000
0
Common Emitter
V = 600V, V = 15V, I = 60A
CC GE C
T = 25oC
C
T = 125oC
C
20 40 60 80
Gate Resistance, R [Ω]
G
100
10
10
Common Emitter
V = 600V, V = 15V, R = 50Ω
cc GE G
T = 25oC
C
T = 125oC
C
20 30 40 50
Collector Current, I [A]
C
60
Fig. 11 Turn off time vs. collector current
10000
Fig. 12 Switching loss vs. collector current
100000
1000
t
d(off)
t
f
100
10
10
Common Emitter
V = 600V, V = 15V, R = 50Ω
cc GE G
T = 25oC
C
T = 125oC
C
20 30 40 50 60
Collector Current, I [A]
C
10000
E
ON
1000
E
OFF
100
10
Aug. 2012 : Rev1
www.trinnotech.com
Common Emitter
V = 600V, V = 15V, R = 50Ω
cc GE G
T = 25oC
C
T = 125oC
C
20 30 40 50
Collector Current, I [A]
C
60
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TGL60N100ND1.PDF ] | |
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