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NT5CB64M16DP fiches techniques PDF

Nanya - 1Gb DDR3 SDRAM

Numéro de référence NT5CB64M16DP
Description 1Gb DDR3 SDRAM
Fabricant Nanya 
Logo Nanya 





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NT5CB64M16DP fiche technique
1Gb DDR3 SDRAM
NT5CB128M8DN / NT5CB64M16DP
NT5CC128M8DN / NT5CC64M16DP
Feature
1.5V ± 0.075V & 1.35V -0.067/+0.1V
(JEDEC Standard Power Supply)
VDD= VDDQ= 1.35V (1.283~1.45V )
Backward compatible to VDD= VDDQ= 1.5V
±0.075V
Supports DDR3L devices to be backward
compatible in 1.5V applications
The timing specification of high speed bin is
backward compatible with low speed bin
8 Internal memory banks (BA0- BA2)
Differential clock input (CK, )
Programmable Latency: 5, 6, 7, 8, 9,
10, 11, 12, 13, (14)
POSTED CAS ADDITIVE Programmable Additive
Latency: 0, CL-1, CL-2
Programmable Sequential / Interleave Burst Type
Programmable Burst Length: 4, 8
8n-bit prefetch architecture
Output Driver Impedance Control
Differential bidirectional data strobe
Write Leveling
OCD Calibration
Dynamic ODT (Rtt_Nom & Rtt_WR)
Auto Self-Refresh
Self-Refresh Temperature
RoHS Compliance
Lead-Free and Halogen-Free
Packages:
78-Ball BGA for x8 components
96-Ball BGA for x16 components
Operation Temperture
Commerical grade (0℃≦TC95)
- BE, CF, DH, EJ, FK
Industial grade (-40℃≦TC95)
- CFI, DHI
DCC Version 1.1
01/ 2014
1
© NANYA TECHNOLOGY CORP.
All rights reserved
NANYA TECHNOLOGY CORP. reserves the right to change Products and Specifications without notice.

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