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KU310N10D fiches techniques PDF

KEC - N-Ch Trench MOSFET

Numéro de référence KU310N10D
Description N-Ch Trench MOSFET
Fabricant KEC 
Logo KEC 





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KU310N10D fiche technique
SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES
VDSS= 100V, ID= 27A
Drain-Source ON Resistance :
RDS(ON)=31m (Max.) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
100
20
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
27
17
110*
60
2.3
4.5
52
0.42
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
150
-55 ~ 150
Thermal Resistance, Junction-to-Case RthJC
Thermal Resistance,
Junction-to-Ambient
RthJA
* : Drain current limited by maximum junction temperature.
2.4
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
PIN CONNECTION
KU310N10D
N-ch Trench MOS FET
2012. 7. 6
Revision No : 2
1/7

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