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Numéro de référence | KTX412T | ||
Description | EPITAXIAL PLANAR NPN TRANSISTOR | ||
Fabricant | KEC | ||
Logo | |||
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Including two(TR, Diode) devices in TSV.
(Thin Super Mini type with 5 pin)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
EQUIVALENT CIRCUIT (TOP VIEW)
54
Marking
5
4
D1 Q1
CNType Name
Lot No.
12 3
1 23
KTX412T
EPITAXIAL PLANAR NPN TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
E
B
15
2
34
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9+_ 0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
JJ
1. D 1 ANODE
2. Q 1 BASE
3. Q 1 EMITTER
4. Q 1 COLLECTOR
5. D 1 CATHODE
TSV
MAXIMUM RATINGS (Ta=25 )
TRANSISTOR Q1
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
* Package mounted on a ceramic board (600
0.8 )
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
PC *
Tj
Tstg
DIODE D1
CHARACTERISTIC
Repetitive Peak Reverse Voltage
Reverse Voltage
Average Forward Current
Non-Repetitive Peak Surge current
Junction Temperature
Storage Temperature
2003. 3. 11
Revision No : 1
SYMBOL
VRRM
VR
IO
IFSM
Tj
Tstg
RATING
20
20
5
1.5
3
0.9
150
-55~125
RATING
25
20
1.0
3
125
-55~125
UNIT
V
V
V
A
A
UNIT
V
V
A
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Pages | Pages 4 | ||
Télécharger | [ KTX412T ] |
No | Description détaillée | Fabricant |
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