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Numéro de référence | KTA1271 | ||
Description | EPITAXIAL PLANAR PNP TRANSISTOR | ||
Fabricant | KEC | ||
Logo | |||
1 Page
SEMICONDUCTOR
TECHNICAL DATA
HIGH CURRENT APPLICATION.
FEATURES
ᴌHigh hFE : hFE=100ᴕ320.
ᴌComplementary to KTC3203.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Emitter Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IE
PC
Tj
Storage Temperature Range
Tstg
RATING
-35
-30
-5
-800
800
625
150
-55ᴕ150
UNIT
V
V
V
mA
mA
mW
ᴱ
ᴱ
KTA1271
EPITAXIAL PLANAR PNP TRANSISTOR
BC
K
E
G
D
H
FF
1 23
N DIM MILLIMETERS
A 4.70 MAX
B 4.80 MAX
C 3.70 MAX
D 0.45
E 1.00
F 1.27
G 0.85
H 0.45
J 14.00 +_0.50
K 0.55 MAX
L 2.30
M 0.45 MAX
N 1.00
1. EMITTER
2. COLLECTOR
3. BASE
TO-92
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
Collector Output Capacitance
Note : hFE(1) Classification 0:100ᴕ200,
ICBO
IEBO
V(BR)CEO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE
fT
Cob
Y:160ᴕ320
TEST CONDITION
VCB=-35V, IE=0
VEB=-5V, IC=0
IC=-10mA, IB=0
VCE=-1V, IC=-100mA
VCE=-1V, IC=-700mA
IC=-500mA, IB=-20mA
VCE=-1V, IC=-10mA
VCE=-5V, IC=-10mA
VCB=-10V, IE=0, f=1MHz
MIN.
-
-
-30
100
35
-
-0.5
-
-
TYP.
-
-
-
-
-
-
-
120
19
MAX.
-100
-100
-
320
-
-0.7
-0.8
-
-
UNIT
nA
nA
V
V
V
MHz
pF
1998. 12. 26
Revision No : 2
1/2
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Pages | Pages 2 | ||
Télécharger | [ KTA1271 ] |
No | Description détaillée | Fabricant |
KTA1270 | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
KTA1271 | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
KTA1272 | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
KTA1273 | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
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