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PDF KTB817B Data sheet ( Hoja de datos )
| Número de pieza | KTB817B | |
| Descripción | TRIPLE DIFFUSED PNP TRANSISTOR | |
| Fabricantes | KEC | |
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SEMICONDUCTOR
TECHNICAL DATA
HIGH POWER AMPLIFIER APPLICATION.
FEATURES
Complementary to KTD1047B.
Recommended for 60W Audio Frequency
Amplifier Output Stage.
KTB817B
TRIPLE DIFFUSED PNP TRANSISTOR
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
RATING
-160
-140
-6
-12
-15
100
150
-55 150
UNIT
V
V
V
A
W
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
ICBO
Emitter Cut-off Current
IEBO
DC Current Gain
hFE (1) (Note)
hFE 2
Collector-Emitter Saturation Voltage
VCE(sat)
Base-Emitter Voltage
VBE
Transition Frequency
fT
Output Capacitance
Cob
Turn On Time
ton
Fall Time
tf
Storage Time
tstg
Note : hFE(1) Classification O:60 120, Y:100 200
TEST CONDITION
VCB=-80V, IE=0
VEB=-4V, IC=0
VCE=-5V, IC=-1A
VCE=-5V, IC=-6A
IC=-5A, IB=-0.5A
VCE=-5V, IC=-1A
VCE=-5V, IC=-1A
VCB=-10V, IE=0, f=1MHz
VCC=-20V
IC=1A=10 IB1=-10 IB2
RL=20
MIN.
-
-
60
20
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
15
300
0.25
0.53
1.61
MAX.
-0.1
-0.1
200
-2.5
-1.5
-
-
-
-
-
UNIT
mA
mA
V
V
MHz
pF
S
2011. 3. 18
Revision No : 0
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KTB817B.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| KTB817 | TRIPLE DIFFUSED PNP TRANSISTOR(HIGH POWER AMPLIFIER) | .gif){kind=logo} KEC(Korea Electronics) |
| KTB817 | TRIPLE DIFFUSED PNP TRANSISTOR | KEC |
| KTB817B | TRIPLE DIFFUSED PNP TRANSISTOR | KEC |
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