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Taiwan Semiconductor - Glass Passivated Rectifiers

Numéro de référence GP1001
Description Glass Passivated Rectifiers
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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GP1001 fiche technique
GP1001 - GP1007
Taiwan Semiconductor
CREAT BY ART
10A, 50V - 1000V Glass Passivated Rectifiers
FEATURES
- High efficiency, low VF
- High current capability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case: TO-220AB
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal: Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity: As marked
Mounting torque: 0.56 Nm max.
Weight: 1.82 g (approximately)
TO-220AB
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
PARAMETER
GP GP GP GP GP GP
SYMBOL
1001 1002 1003 1004 1005 1006
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
50 100 200 400 600 800
35 70 140 280 420 560
Maximum DC blocking voltage
VDC 50 100 200 400 600 800
Maximum average forward rectified current
IF(AV)
10
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
125
GP
1007
1000
700
1000
Maximum instantaneous forward voltage (Note 1)
@5A
VF
1.1
Maximum reverse current @ rated VR
TJ=25°C
TJ=125°C
IR
Typical junction capacitance (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
CJ
RθJC
TJ
TSTG
Note 2: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
5
200
30
3
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
pF
°C/W
°C
°C
Version: F1511

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