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Numéro de référence | IRF100B201 | ||
Description | Power MOSFET ( Transistor ) | ||
Fabricant | International Rectifier | ||
Logo | |||
1 Page
Application
Brushed Motor drive applications
BLDC Motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
DC/AC Inverters
G
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant, Halogen-Free
StrongIRFET™
IRF100B201
IRF100S201
HEXFET® Power MOSFET
D VDSS
100V
RDS(on) typ.
max
3.5m
4.2m
IS
D (Silicon Limited)
192A
GDS
TO-220AB
IRF100B201
D
S
G
D2-Pak
IRF100S201
G
Gate
D
Drain
S
Source
Base part number
IRF100B201
IRF100S201
Package Type
TO-220
D2-Pak
Standard Pack
Form
Quantity
Tube
50
Tape and Reel
800
Orderable Part Number
IRF100B201
IRF100S201
20
18
16
14
12
10
8
6
4
2
2
ID = 115A
TJ = 125°C
TJ = 25°C
4 6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On– Resistance vs. Gate Voltage
1 www.irf.com © 2015 International Rectifier
200
160
120
80
40
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 2. Maximum Drain Current vs. Case Temperature
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March 26, 2015
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Pages | Pages 12 | ||
Télécharger | [ IRF100B201 ] |
No | Description détaillée | Fabricant |
IRF100B201 | Power MOSFET ( Transistor ) | International Rectifier |
IRF100B202 | Power MOSFET ( Transistor ) | International Rectifier |
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