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Numéro de référence | GA01PNS100-CAL | ||
Description | Silicon Carbide PiN Diode Chip | ||
Fabricant | GeneSiC | ||
Logo | |||
Silicon Carbide
PiN Diode Chip
Die Datasheet
GA01PNS100-CAL
VRRM
IF @ 25 oC
QC
= 10000 V
= 2A
= 5 nC
Features
10 kV blocking
210 °C operating temperature
Fast turn off characteristics
Soft reverse recovery characteristics
Ultra-Fast high temperature switching
Advantages
Industry’s lowest conduction losses
Reduced stacking
Reduced system complexity/Increased reliability
Die Size = 2.4 mm x 2.4 mm
Applications
Voltage Multiplier
Ignition/Trigger Circuits
Oil/Downhole
Lighting
Defense
Maximum Ratings at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Repetitive peak reverse voltage
Continuous forward current
RMS forward current
Operating and storage temperature
VRRM
IF
IF(RMS)
Tj , Tstg
Conditions
TC ≤ 150 °C
TC ≤ 150 °C
Values
10
2
1
-55 to 210
Electrical Characteristics at Tj = 210 °C, unless otherwise specified
Parameter
Symbol
Conditions
Diode forward voltage
Reverse current
Total reverse recovery charge
Switching time
Total capacitance
Total capacitive charge
VF
IF = 2 A, Tj = 25 °C
IF = 2 A, Tj = 210 °C
IR
VR = 10 kV, Tj = 25 °C
VR = 10 kV, Tj = 210 °C
Qrr
ts
IF ≤ IF,MAX
dIF/dt = 70 A/μs
Tj = 210 °C
VR = 1000 V
IF = 1.5 A
VR = 1000 V
IF = 1.5 A
VR = 1 V, f = 1 MHz, Tj = 25 °C
C VR = 400 V, f = 1 MHz, Tj = 25 °C
VR = 1000 V, f = 1 MHz, Tj = 25 °C
QC VR = 1000 V, f = 1 MHz, Tj = 25 °C
min.
Values
typ.
4.4
4.1
0.1
558
< 236
20
5
4
5
max.
4.8
4.5
3
50
Unit
kV
A
A
°C
Unit
V
µA
nC
ns
pF
nC
Feb 2015
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-bare-die/
Page 1 of 5
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Pages | Pages 6 | ||
Télécharger | [ GA01PNS100-CAL ] |
No | Description détaillée | Fabricant |
GA01PNS100-CAL | Silicon Carbide PiN Diode Chip | GeneSiC |
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