DataSheetWiki


2N12 fiches techniques PDF

Inchange Semiconductor - N-Channel MOSFET Transistor

Numéro de référence 2N12
Description N-Channel MOSFET Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





1 Page

No Preview Available !





2N12 fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N12
·FEATURES
·Drain Current ID= 2A@ TC=25
·Drain Source Voltage-
: VDSS= 120V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.75Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching regulators
·Switching converters,motor drivers,relay drivers
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
120
±30
V
V
ID Drain Current-Continuous
2A
IDM Drain Current-Single Plused
5A
PD Total Dissipation @TC=25
25 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

PagesPages 2
Télécharger [ 2N12 ]


Fiche technique recommandé

No Description détaillée Fabricant
2N1011 Germanium Transistors Semitronics
Semitronics
2N1015 SIGNAL OR COMPUTER DIODE New Jersey Semiconductor
New Jersey Semiconductor
2N1015A SIGNAL OR COMPUTER DIODE New Jersey Semiconductor
New Jersey Semiconductor
2N1015B SIGNAL OR COMPUTER DIODE New Jersey Semiconductor
New Jersey Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche