|
|
Numéro de référence | 2N12 | ||
Description | N-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2N12
·FEATURES
·Drain Current ID= 2A@ TC=25℃
·Drain Source Voltage-
: VDSS= 120V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 1.75Ω(Max)
·Fast Switching
·APPLICATIONS
·Switching regulators
·Switching converters,motor drivers,relay drivers
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
Drain-Source Voltage
Gate-Source Voltage-Continuous
120
±30
V
V
ID Drain Current-Continuous
2A
IDM Drain Current-Single Plused
5A
PD Total Dissipation @TC=25℃
25 W
Tj Max. Operating Junction Temperature 150 ℃
Tstg Storage Temperature
-55~150 ℃
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
|||
Pages | Pages 2 | ||
Télécharger | [ 2N12 ] |
No | Description détaillée | Fabricant |
2N1011 | Germanium Transistors | Semitronics |
2N1015 | SIGNAL OR COMPUTER DIODE | New Jersey Semiconductor |
2N1015A | SIGNAL OR COMPUTER DIODE | New Jersey Semiconductor |
2N1015B | SIGNAL OR COMPUTER DIODE | New Jersey Semiconductor |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |