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2SK1018 fiches techniques PDF

Inchange Semiconductor - N-Channel MOSFET Transistor

Numéro de référence 2SK1018
Description N-Channel MOSFET Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SK1018 fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
DESCRIPTION
·Drain Current ID=18A@ TC=25
·Drain Source Voltage-
: VDSS=500V(Min)
APPLICATIONS
·high voltage, high speed power switching
isc Product Specification
2SK1018
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
500 V
Gate-Source Voltage
±30
V
Drain Current-continuous@ TC=2518 A
Total Dissipation@TC=25
125 W
Max. Operating Junction Temperature
150
Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 /W
Rth j-a Thermal Resistance,Junction to Ambient 35 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

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