|
|
Numéro de référence | 2SK1082 | ||
Description | N-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1082
DESCRIPTION
·Drain Current –ID=6A@ TC=25℃
·Drain Source Voltage-
: VDSS=900V(Min)
APPLICATIONS
·Designed for high voltage, high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
VGS
ID
Ptot
Tj
Tstg
Drain-Source Voltage (VGS=0)
900 V
Gate-Source Voltage
±30
V
Drain Current-continuous@ TC=25℃ 6 A
Total Dissipation@TC=25℃
125 W
Max. Operating Junction Temperature
150
℃
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
1.0 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 35 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
|
|||
Pages | Pages 2 | ||
Télécharger | [ 2SK1082 ] |
No | Description détaillée | Fabricant |
2SK108 | Silicon P-Channel FET | Toshiba |
2SK1081 | N-Channel MOSFET Transistor | Inchange Semiconductor |
2SK1081 | (2SKxxxx) Power MOSFET | Fuji Semiconductors |
2SK1081-01 | N-Channel Silicon Power MOSFET | Fuji |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |