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PDF K3670 Data sheet ( Hoja de datos )
| Número de pieza | K3670 | |
| Descripción | MOSFET ( Transistor ) - 2SK3670 | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de K3670 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
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2SK3670
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK3670
Chopper Regulator and DC−DC Converter Applications
z 2.5V-Gate Drive
z Low drain-source ON resistance: RDS (ON) = 1.0 Ω (typ.)
z High forward transfer admittance: |Yfs| = 2.1 S (typ.)
z Low leakage current: IDSS = 100 μA (max) (VDS = 150 V)
www.DataSheetz4U.cEonmhancement mode: Vth = 0.5~1.3 V (VDS = 10 V, ID =200μA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain−source voltage
Drain−gate voltage (RGS = 20 kΩ)
Gate−source voltage
DC (Note 1)
Drain current
Pulse(t≦5s)
(Note 1)
Pulse
(Note 1)
Drain power dissipation
Single pulse avalanche energy
(Note 2)
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Symbol
VDSS
VDGR
VGSS
ID
IDP
IDP
PD
EAS
IAR
EAS
Tch
Tstg
Rating
150
150
±12
0.67
1
3
0.9
41
0.67
0.09
150
−55~150
Unit
V
V
V
A
W
mJ
A
mJ
°C
°C
Unit: mm
JEDEC
TO-92MOD
JEITA
—
TOSHIBA
2-5J1C
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
Thermal Characteristics
2
Characteristics
Symbol
Max Unit
Thermal resistance, channel to
ambient
Rth (ch−a)
138 °C / W
Note 1: Ensure that the channel temperature does not exceed 150℃.
Note 2: VDS = 50V、Tch = 25℃(initial)、L = 135mH、IAR = 0.67A、RG = 25Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
3
1
1 2007-07-24
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet K3670.PDF ] | |
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