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FTP02N65 fiches techniques PDF

IPS - N-Channel MOSFET

Numéro de référence FTP02N65
Description N-Channel MOSFET
Fabricant IPS 
Logo IPS 





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FTP02N65 fiche technique
FTP02N65
FTA02N65
N-Channel MOSFET
Applications:
• Adaptor
• Charger
• SMPS Standby Power
• LCD Panel Power
Features:
• RoHS Compliant
• Low ON Resistance
• Low Gate Charge
• Peak Current vs Pulse Width Curve
• Inductive Switching Curves
Ordering Information
PART NUMBER
FTP02N65
FTA02N65
PACKAGE
TO-220
TO-220F
BRAND
FTP02N65
FTA02N65
Pb Lead Free Package and Finish
VDSS
650V
RDS(ON) (Max.)
5.0
ID
2.0A
D
G DS
TO-220
Not to Scale
G DS
TO-220F
Not to Scale
G
S
Absolute Maximum Ratings TC=25 oC unless otherwise specified
Symbol
Parameter
FTP02N65 FTA02N65
Units
VDSS
ID
ID@ 100 oC
IDM
PD
Drain-to-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current, VGS@ 10V
Power Dissipation
Derating Factor above 25 oC
(NOTE *1)
(NOTE *2)
650
2.0 2.0*
Figure 3
Figure 6
54 21
0.43 0.17
V
A
W
W/ oC
VGS
EAS
IAS
dv/dt
Gate-to-Source Voltage
Single Pulse Avalanche Engergy
L=38 mH, ID=2.1 Amps
Pulsed Avalanche Rating
Peak Diode Recovery dv/dt
(NOTE *3)
± 30
84
Figure 8
3.0
V
mJ
V/ ns
TL
TPKG
TJ and TSTG
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10 seconds
Package Body for 10 seconds
Operating Junction and Storage
Temperature Range
300
260
-55 to 150
oC
*Drain Current limited by Maximum Junction Temperature.
Caution: Stresses greater than those listed in the “Absolute Maximum Ratings” Table may cause permanent damage to the device.
Thermal Resistance
Symbol
Parameter
FTP02N65
RθJC
Junction-to-Case
RθJA
Junction-to-Ambient
©2006 InPower Semiconductor Co., Ltd.
2.3
62
FTA02N65
6.0
62
Units
oC/W
Test Conditions
Water cooled heatsink, PD adjusted for
a peak junction temperature of +150 oC.
1 cubic foot chamber, free air.
FTP02N65/FTA02N65 REV. B October 2006

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