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PDF P90N55F4 Data sheet ( Hoja de datos )
| Número de pieza | P90N55F4 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STP90N55F4
N-channel 55 V, 0.0064 Ω, 90 A, TO-220
STripFET™ DeepGATE™ Power MOSFET
Features
Type
STP90N55F4
VDSS
55 V
RDS(on) max
< 0.008 Ω
ID
90 A
■ Exceptional dv/dt capability
■ Extremely low on-resistance RDS(on)
■ 100% avalanche tested
Applications
■ Switching applications
Description
This device is an N-channel Power MOSFET
developed using ST’s STripFET™ DeepGATE™
technology. The device has a new gate structure
and is specially designed to minimize on-state
resistance to provide superior switching
performance.
TAB
3
2
1
TO-220
Figure 1. Internal schematic diagram
$ 4!"
'
Table 1. Device summary
Order codes
STP90N55F4
Marking
90N55F4
3
!-V
Packages
TO-220
Packaging
Tube
August 2011
Doc ID 022110 Rev 1
1/13
www.st.com
13
1 page  
STP90N55F4
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max Unit
ISD
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 90 A, VGS = 0
-
-
90 A
360 A
1.5 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 90 A, VDD = 44 V
50
di/dt = 100 A/µs,
- 105
Tj = 150 °C
4
Figure 15
ns
nC
A
1. Pulse width limited by safe operating area.
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%
Doc ID 022110 Rev 1
5/13
5 Page 
STP90N55F4
Figure 19. TO-220 type A drawing
Package mechanical data
0015988_typeA_Rev_S
Doc ID 022110 Rev 1
11/13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet P90N55F4.PDF ] | |
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