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Numéro de référence | 1N4448WT | ||
Description | High Conductance Fast Switching Diode | ||
Fabricant | Fairchild Semiconductor | ||
Logo | |||
1 Page
1N4148WT / 1N4448WT / 1N914BWT
High Conductance Fast Switching Diode
• Fast Switching Diode (Trr <4.0nsec)
• Flat Lead, Surface Mount Device under 0.70mm Height
• Extremely Small Outline Plastic Package SOD523F
• Moisture Level Sensitivity 1
• Pb-free Version and RoHS Compliant
• Matte Tin (Sn) Lead Finish
• Green Mold Compound
Device Marking Code
Device Type Device Marking
1N4148WT
E1
1N4448WT
E2
1N914BWT
E3
March 2008
SOD-523F
Band Indicates Cathode*
Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol
VRSM
VRRM
I FRM
TJ
TSTG
Parameter
Non-Repetitive Peak Reverse Voltage
Repetitive Peak Reverse Voltage
Repetitive Peak Forward Current
Operating Junction Temperature Range
Storage Temperature Range
Value
75
75
300
-55 to +150
-55 to +150
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
°C
Thermal Characteristics
Symbol
Parameter
RθJA
Thermal Resistance, Junction to Ambient
PD Power Dissipation(TC=25°C)
*Device mounted on FR-4 PCB minimum land pad.
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
Parameter
Test Conditions
BVR Breakdown Voltage
IR = 100 μA
IR = 5 μA
IR Reverse Current
VR = 20 V
VR = 75 V
VF Forward Voltage
1N4448WT/ 914WT IF = 5 mA
1N4448WT
IF = 10 mA
1N4448WT/ 914WT IF = 100 mA
CO Diode Capacitance
VR = 0, f = 1 MHz
TRR Reverse Recovery Time
I F = 10 mA, VR = 6.0 V
I RR = 1 mA, RL = 100 Ω
Min
100
75
0.62
Value
500
200
Unit
°C/W
mW
Typ
Max
25
5
0.72
1
1
4
4
Units
V
nA
μA
V
pF
nS
© 2007 Fairchild Semiconductor Corporation
1N4148WT / 1N4448WT / 1N914BWT Rev. 1.0
1
www.fairchildsemi.com
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Pages | Pages 6 | ||
Télécharger | [ 1N4448WT ] |
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