DataSheetWiki


1SS190 fiches techniques PDF

LGE - Switching Diodes

Numéro de référence 1SS190
Description Switching Diodes
Fabricant LGE 
Logo LGE 





1 Page

No Preview Available !





1SS190 fiche technique
1. N.C
2. CATHODE
3. ANODE
Features
— Low forward voltage
: VF(3)=0.92V(typ.)
— Fast reverse recovery time : trr=1.6ns(typ.)
MARKING: E3
Maximum Ratings @TA=25
Parameter
Non-Repetitive Peak reverse voltage
DC Blocking Voltage
Forward Continuous Current
Average Rectified Output Current
Power Dissipation
Junction temperature
Storage temperature range
Symbol
VRM
VR
IFM
IO
PD
TJ
TSTG
1SS190
Switching Diodes
SOT-23
Dimensions in inches and (millimeters)
Limits
85
80
300
100
150
125
-55-125
Unit
V
V
mA
mA
mW
Electrical Characteristics @TA=25
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
V (BR)R
VF1
VF2
VF3
IR1
IR2
CT
t rr
Min.
80
Typ.
0.61
0.74
0.92
2.2
1.6
Max. Unit
V
V
V
1.2 V
0.1 uA
0.5 uA
4.0 pF
4.0 ns
Conditions
IR=100μA
IF=1mA
IF=10mA
IF=100mA
VR=30V
VR=80V
VR=0,f=1MHz
IF=IR=10mA,Irr=0.1×IR
http://www.luguang.cn

PagesPages 2
Télécharger [ 1SS190 ]


Fiche technique recommandé

No Description détaillée Fabricant
1SS190 SILICON EPITAXIAL PLANAR DIODE Toshiba Semiconductor
Toshiba Semiconductor
1SS190 Switching Diodes LGE
LGE
1SS190 SWITCHING DIODE RECTRON
RECTRON
1SS190 SWITCHING DIODE JCET
JCET

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche