DataSheetWiki


1SS370 fiches techniques PDF

JCET - SWITCHING DIODE

Numéro de référence 1SS370
Description SWITCHING DIODE
Fabricant JCET 
Logo JCET 





1 Page

No Preview Available !





1SS370 fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-323 Plastic-Encapsulate Diode
1SS370
SWITCHING DIODE
FEATURES
z High voltage, high speed switching applications
z Low forward voltage
z Fast reverse recovery time
z Small total capacitance
MAKING: F5
SOT-323
1
2
F5
F5
Solid dot = Green molding compound device,
if none,the normal device.
3
Maximum Ratings @Ta=25
Parameter
Peak reverse voltage
DC reverse voltage
Peak forward current
Mean rectifying current
Non-Repetitive Peak Forward Surge current@t=8 .3ms
Junction temperature
Storage temperature
Symbol
VRM
VR
IFM
IO
IFSM
Tj
Tstg
Limit
250
200
300
100
2.0
150
-55~+150
Unit
V
V
mA
mA
A
Electrical Ratings @Ta=25
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Reverse recovery time
Symbol
VF
IR
CT
trr
Min Typ
60
Max
1
1.2
0.1
1
3.0
Unit
V
V
μA
μA
pF
ns
Conditions
IF=10mA
IF=100mA
VR=50V
VR=200V
VR=0, f=1MHZ
VR=6V,IF=10mA,Irr=0.1*IR
www.cj-elec.com
1
C,Oct,2014

PagesPages 4
Télécharger [ 1SS370 ]


Fiche technique recommandé

No Description détaillée Fabricant
1SS370 DIODE (HIGH VOLTAGE/ HIGH SPEED SWITCHING APPLICATIONS) Toshiba Semiconductor
Toshiba Semiconductor
1SS370 SWITCHING DIODE Transys
Transys
1SS370 Surface Mount Switching Diode LGE
LGE
1SS370 Surface Mount Switching Diode WEITRON
WEITRON

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche