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Número de pieza | QID3310006 | |
Descripción | Dual IGBT HVIGBT Module | |
Fabricantes | Powerex | |
Logotipo | ||
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No Preview Available ! Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID3310006 Preliminary
Dual IGBT
HVIGBT Module
100 Amperes/3300 Volts
S NUTS
(3TYP)
A
D
FF
J (2TYP)
C
BE
M
1
G (3TYP)
T
(SCREWING
DEPTH - 3 TYP)
23
H
H
R (DEEP)
K
(3TYP)
L
(2TYP)
V (4TYP)
U (5TYP)
P
Q
N
42
8
7
1
5
63
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A 5.51 140.0
B 2.87
73.0
C 1.50
38.0
D 4.88±0.01 124.0±0.25
E 2.24±0.01
57.0±0.25
F 1.18
30.0
G 0.43
11.0
H 1.07
27.15
J 0.20
5.0
K 1.65
42.0
Dimensions
L
M
N
P
Q
R
S
T
U
V
Inches
0.69±0.01
0.38
0.20
0.22
1.04
0.16
M5 Metric
0.63 Min.
0.11 x 0.02
0.28 Dia.
Millimeters
17.5±0.25
9.75
5.0
5.5
26.5
4.0
M5
16.0 Min.
2.8 x 0.5
7.0 Dia.
Description:
Powerex HVIGBTs feature highly
insulating housings that offer
enhanced protection by means of
greater creepage and strike clear-
ance distance for many demanding
applications like medium voltage
drives and auxiliary traction
applications.
Features:
-40 to 150°C Extended
Temperature Range
100% Dynamic Tested
100% Partial Discharge Tested
Advanced Mitsubishi R-Series
Chip Technology
Aluminum Nitride (AlN) Ceramic
Substrate for Low Thermal
Impedance
Complementary Line-up in
Expanding Current Ranges to
Mitsubishi HVIGBT Power
Modules
Copper Baseplate
Creepage and Clearance Meet
IEC 60077-1
Rugged SWSOA and RRSOA
Applications:
High Voltage Power Supplies
Medium Voltage Drives
Motor Drives
Traction
11/14 Rev. 1
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
1
1 page Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3310006
Dual IGBT HVIGBT Module
100 Amperes/3300 Volts
Preliminary
50.0
5.0
CAPACITANCE VS.
(TYPICAL)
VCE
Cies
0.5
VGE = 0V
Tj = 25°C
f = 100 kHz
Coes
Cres
0.05
10-1 100 101 102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
500
450
400
350
300
250
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
VCC = 1800V
VGE = ±15V
RG(on) = 30Ω
RG(off) = 100Ω
Ls = 100nH
Tj = 125°C
Inductive Load
Eon
Eoff
200
150 Erec
100
50
0
0 25 50 75 100 125 150 175
COLLECTOR CURRENT, IC, (AMPERES)
GATE CHARGE VS. VGE
20
VCE = 1800V
15 IC = 85A
Tj = 25°C
10
5
0
-5
-10
-15
0
0.25 0.5 0.75
GATE CHARGE, QG, (μC)
1.0
HALF-BRIDGE
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
550
500
450
VCC = 1800V
VGE = ±15V
RG(on) = 30Ω
400 RG(off) = 100Ω
350
Ls = 100nH
Tj = 150°C
300 Inductive Load
250
Eon
Eoff
200
150 Erec
100
50
0
0
25 50 75 100 125 150 175
COLLECTOR CURRENT, IC, (AMPERES)
11/14 Rev. 1
Information presented is based upon manufacturers testing and projected capabilities. This information is subject to change without notice.
The manufacturer makes no claim as to the suitability of use, reliability, capability, or future availability of this product.
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet QID3310006.PDF ] |
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