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Número de pieza | QID3320002 | |
Descripción | Dual IGBT HVIGBT Module | |
Fabricantes | Powerex | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de QID3320002 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
www.pwrx.com
QID3320002
Dual IGBT
HVIGBT Module
200 Amperes/3300 Volts
S NUTS
(3TYP)
A
D
FF
J (2TYP)
C
BE
1 23
H
M
H
G (3TYP)
T (SCREWING
DEPTH)
R (DEEP)
K
(3TYP)
L
(2TYP)
V (4TYP)
U (5TYP)
P
Q
N
41
5
6
2
8
73
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A 5.51 140.0
B 2.87
73.0
C 1.89
48.0
D 4.88±0.01 124.0±0.25
E 2.24±0.01
57.0±0.25
F 1.18
30.0
G 0.43
11.0
H 1.07
27.15
J 0.20
5.0
K 1.65
42.0
Dimensions
L
M
N
P
Q
R
S
T
U
V
Inches
0.69±0.01
0.38
0.20
0.22
1.44
0.16
M6 Metric
0.63 Min.
0.11 x 0.02
0.28 Dia.
Millimeters
17.5±0.25
9.75
5.0
5.5
36.5
4.0
M6
16.0 Min.
2.8 x 0.5
7.0 Dia.
Description:
Powerex IGBT Modules are
designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-
connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.
Features:
Advanced Mitsubishi R-Series
Chip Technology
Low VCE(sat)
Creepage and Clearance
meet IEC 60077-1
High Isolation Voltage
Rugged SWSOA and RRSOA
Compact Industry Standard
Package
Applications:
Medium Voltage Drives
High Voltage Power Supplies
01/13 Rev. 8
1
1 page Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
QID3320002
Dual IGBT HVIGBT Module
200 Amperes/3300 Volts
CAPACITANCE VS.
(TYPICAL)
VCE
100
Cies
10
1.0
VGE = 0V
Tj = 25°C
f = 100 kHz
Coes
Cres
0.1
10-1 100 101 102
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
1000
900
800
700
600
500
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
VCC = 1800V
VGE = +15V/-8V
RG(on) = 15Ω
RG(off) = 50Ω
Ls = 100nH
Tj = 125°C
Inductive Load
Eon
Eoff
400
300 Erec
200
100
0
0 50 100 150 200 250 300 350
COLLECTOR CURRENT, IC, (AMPERES)
GATE CHARGE VS. VGE
20
VCE = 1800V
15 IC = 170A
Tj = 25°C
10
5
0
-5
-10
-15
0
0.5 1.0 1.5
GATE CHARGE, QG, (μC)
2.0
1100
1000
900
800
700
600
500
400
300
200
HALF-BRIDGE
SWITCHING ENERGY
CHARACTERISTICS (TYPICAL)
VCC = 1800V
VGE = +15V/-8V
RG(on) = 15Ω
RG(off) = 50Ω
Ls = 100nH
Tj = 150°C
Inductive Load
Eon
Eoff
Erec
100
0
0
50 100 150 200 250 300 350
COLLECTOR CURRENT, IC, (AMPERES)
01/13 Rev. 8
5
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet QID3320002.PDF ] |
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