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Numéro de référence | 2SK1277 | ||
Description | N-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
1 Page
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK1277
DESCRIPTION
·Drain Current –ID= 30A@ TC=25℃
·Drain Source Voltage-
: VDSS=250V(Min)
·Fast Switching Speed
APPLICATIONS
·high speed power switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
Ptot Total Dissipation@TC=25℃
Tj Max. Operating Junction Temperature
Tstg Storage Temperature Range
VALUE
UNI
T
250 V
±20
V
30 A
150 W
150 ℃
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
th j-c Thermal Resistance,Junction to Case
0.83 ℃/W
th j-a Thermal Resistance,Junction to Ambient 35 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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Pages | Pages 2 | ||
Télécharger | [ 2SK1277 ] |
No | Description détaillée | Fabricant |
2SK1271 | N CHANNEL MOS FIELD EFFECT POWER TRANSISTOR | NEC |
2SK1272 | N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING | NEC |
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2SK1274 | N-CHANNEL MOS FET FOR HIGH SPEED SWITCHING | NEC |
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