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DIM1200ASM45-TL000 fiches techniques PDF

Dynex - Single Switch IGBT Module

Numéro de référence DIM1200ASM45-TL000
Description Single Switch IGBT Module
Fabricant Dynex 
Logo Dynex 





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DIM1200ASM45-TL000 fiche technique
Preliminary Information
Data
DIM1200ASM45-TL000
Single Switch IGBT Module
D6158S-1 September 2014 (LN31981)
FEATURES
10µs Short Circuit Withstand
High Thermal Cycling Capability
High Current Density Enhanced DMOS SPT
Isolated AlSiC Base With AlN Substrates
KEY PARAMETERS
VCES
VCE(sat) * (typ)
IC (max)
IC(PK) (max)
4500V
2.3V
1200A
2400A
* Measured at the auxiliary terminals
APPLICATIONS
High Reliability Inverters
Motor Controllers
Traction Drives
Choppers
The Powerline range of high power modules includes
half bridge, chopper, dual, single and bi-directional
switch configurations covering voltages from 1200V to
6500V and currents up to 2400A.
The DIM1200ASM45-TL000 is a single switch 4500V,
n-channel enhancement mode, insulated gate bipolar
transistor (IGBT) module. The IGBT has a wide
reverse bias safe operating area (RBSOA) plus 10μs
short circuit withstand. This device is optimised for
traction drives and other applications requiring high
thermal cycling capability.
The module incorporates an electrically isolated base
plate and low inductance construction enabling circuit
designers to optimise circuit layouts and utilise
grounded heat sinks for safety.
3(C)
2(G)
9(C) 7(C)
5(C)
1(E)
8(E) 6(E) 4(E)
Fig. 1 Circuit configuration
ORDERING INFORMATION
Order As:
DIM1200ASM45-TL000
Note: When ordering, please use the complete part
number
Outline type code: A
(See Fig. 11 for further information)
Fig. 2 Package
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures
www.dynexsemi.com
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