DataSheetWiki


MMBD1501A fiches techniques PDF

JCET - LOW LEAKAGE DIODE

Numéro de référence MMBD1501A
Description LOW LEAKAGE DIODE
Fabricant JCET 
Logo JCET 





1 Page

No Preview Available !





MMBD1501A fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
MMBD1501A LOW LEAKAGE DIODE
FEATURES
Low Leakage
High Conductance
MARKING: A11
SOT-23
A11 A11
Solid dot = Green molding compound device,if none,the normal device.
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Symbol
Parameter
VR DC Blocking Voltage
IO Continuous Forward Current
IFM Peak Forward Current
IFSM Non-repetitive Peak Forward Surge Current @t=8.3ms
PD Power Dissipation
RθJA
Thermal Resistance from Junction to Ambient
Tj Junction Temperature
Tstg Storage Temperature
Value
200
200
700
2.0
350
357
150
-55~+150
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Symbol
V(BR)
IR
VF
Ctot
Test conditions
IR=5μA
VR=180V
IF=1mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
IF=300mA
VR=0V,f=1MHz
Min
200
Unit
V
mA
mA
A
mW
/W
Typ Max
10
0.75
0.85
0.95
1.1
1.3
1.5
4
Unit
V
nA
V
pF
www.cj-elec.com
1
B,Nov,2014

PagesPages 4
Télécharger [ MMBD1501A ]


Fiche technique recommandé

No Description détaillée Fabricant
MMBD1501 High Conductance Low Leakage Diode Fairchild
Fairchild
MMBD1501 High Conductance Low Leakage Diode 350mW Micro Commercial Components
Micro Commercial Components
MMBD1501A Plastic-Encapsulated Diode SeCoS
SeCoS
MMBD1501A High Conductance Low Leakage Diode LGE
LGE

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche