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Numéro de référence | MMBD1501A | ||
Description | LOW LEAKAGE DIODE | ||
Fabricant | JCET | ||
Logo | |||
1 Page
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Diodes
MMBD1501A LOW LEAKAGE DIODE
FEATURES
Low Leakage
High Conductance
MARKING: A11
SOT-23
A11 A11
Solid dot = Green molding compound device,if none,the normal device.
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Symbol
Parameter
VR DC Blocking Voltage
IO Continuous Forward Current
IFM Peak Forward Current
IFSM Non-repetitive Peak Forward Surge Current @t=8.3ms
PD Power Dissipation
RθJA
Thermal Resistance from Junction to Ambient
Tj Junction Temperature
Tstg Storage Temperature
Value
200
200
700
2.0
350
357
150
-55~+150
ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)
Parameter
Reverse voltage
Reverse current
Forward voltage
Total capacitance
Symbol
V(BR)
IR
VF
Ctot
Test conditions
IR=5μA
VR=180V
IF=1mA
IF=10mA
IF=50mA
IF=100mA
IF=200mA
IF=300mA
VR=0V,f=1MHz
Min
200
Unit
V
mA
mA
A
mW
℃/W
℃
℃
Typ Max
10
0.75
0.85
0.95
1.1
1.3
1.5
4
Unit
V
nA
V
pF
www.cj-elec.com
1
B,Nov,2014
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Pages | Pages 4 | ||
Télécharger | [ MMBD1501A ] |
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