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DS521-30WB fiches techniques PDF

WILLAS - Schottky barrier Diode

Numéro de référence DS521-30WB
Description Schottky barrier Diode
Fabricant WILLAS 
Logo WILLAS 





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DS521-30WB fiche technique
WILLAS FM120-M+
WBFBP-02C Plastic-Encapsulate Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
200V
DS521-30WTBHRU
FM1200-M+
SOD-123+ PACKAGE
Pb Free Product
Features
SchottkyBBaatrcrhieprroDcieosdsedesign, excellent power dissipation offers
better reverse leakage current and thermal resistance.
DESCRIPTLoIOw Nprofile surface mounted application in order to
Silicon EpiLotaopwtximipaiolzwePeblarolnaoarsdsr,shpiagchee. fficiency.
High current capability, low forward voltage drop.
FEATUREHSigh surge capability.
z S••mUGalutlralarsdhuriigrnhfga-sfcopereoemvdeosruvwonitltctiahngignegpt.yropteection.
z HigShilicroenliaepbiitlaitxyial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
APPLICATRIoOHSNproduct for packing code suffix "G"
High speMedHeaslcowgheitncafhrneineigcprafoodlrudcdt eafottreapcatciokinng code suffix "H"
DFoVrDp-oRrOta••MbCEl,epaNoseexoqyt:ue:MiUpoBLmlod9eeo4d-nkVpt0P:l(ariCs.aett,ie.ced,MtSfcloOa.)bmDi-el1er2ep3taHhrodnanet,MP3, MD,CD-ROM,
Pb-Free
Tperamcinkaalsg:Pelaitesd
atevrmaiinlaalsb, lseolderab
le
per
MIL-STD-75
,
0
Method 2026
RoHS prPoodlaurcityt :fIondricpaatecdkbiyncgatchooddeebasnduffix ”G”
HalogenMfroeuentinpgroPodsuiticotn f:oAnrypacking code suffix “H”
Package outline
WBFBP-S0O2DC-123H
(1.0×0.6×0.5)
unit: mm
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Weight : Approximated 0.011 gram
MARKING: F MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
  For capacitive load, derate current by 20%
RATINGS
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
MaMxairmkinugmCodReatings and Electrical Characteristics,12Single13Diode1@4 Ta=215516 18 10 115 120
Maximum Recurrent Peak Reverse Voltage
VRRM
20
30
40
50
60
80 100 150 200 V
Maximum RMSPVaorltaagmeeter
SymVRbMoSl 14 21 28 Lim3i5t 42
56
70 Unit 105
140 V
Maximum DC Blocking Voltage
DCMarxeimveumrsAevveroalgteagFoerward Rectified Current
VDC 20 30 40 50 60
80 100 150 200 V
VRIO
30
1.0
V
A
  
MPeeaank FreorcwtaifrdyiSnugrgecCuurrrreenntt8.3 ms single half sine-wave IOIFSM
 
100 30
mA  
A
superimposed on rated load (JEDEC method)
PeTaypkicfaol rTwhearrmdalsRuersgisetacnucerr(eNnotte 2)
Typical Junction Capacitance (Note 1)
IFSRMΘJA
CJ
 
1
40  
A
  120  
POowpeerartidngisTseimpapetiroatnure Range
PDTJ -55 to +125 100  
-55 to +15m0 W
Storage Temperature Range
TSTG
- 65 to +175
T  hermal Resistance from
Junction to AmbieCnHtARACTERISTICS
RθJA
1000
/W
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH U
Maximum Forward Voltage at 1.0A DC
VF
0.50 0.70
0.85 0.9 0.92 V
JuMnacxtimiounmtAevmerpageeraRteuvreerse Current at @T A=25℃ Tj IR
Rated DC Blocking Voltage
@T A=125℃
125 0.5
10
 
m
 
SNtoOrTaEgSe: temperature
Tstg
-55~+150
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
E le2-cTthreircmaallRResaisttainncge sFro@m TJuanc=ti2on5to Ambient
 
Parameter
Symbol
Min
Typ Max Unit
Conditions
Forward voltage
Rev2er0s1e 2cu-0rr6ent
VF
0.35 V
IF=10mA
IR
10 μA
WILLAVRS=1E0VLECTRONIC CORP
2012-11
WILLAS ELECTRONIC CORP.

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