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DS521-30EAA02 fiches techniques PDF

JCET - Schottky barrier diode

Numéro de référence DS521-30EAA02
Description Schottky barrier diode
Fabricant JCET 
Logo JCET 





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DS521-30EAA02 fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB0.6x0.3-2L-B Plastic-Encapsulate Diodes
DS521-30EAA02 SCHOTTKY BARRIER DIODE
DFNWB0.6x0.3-2L-B
FEATURE
Small surface mounting type
Low reverse current and low forward voltage
High reliability
APPLICATION
High speed switching for detection
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
 DVD-ROM, Note book PC, etc.)
MARKING
BACKSIDE 
+
‐ 
FRONTSIDE 
F
MAXIMUM RATINGS (Ta=25unless otherwise noted)
Symbol
Parameter
VRRM
VRWM
VR(RMS)
Repetitive Peak Reverse Voltage
Working Peak Reverse Voltage
RMS Reverse Voltage
IO Average Rectified Output Current
IFSM Non-Repetitive Peak Forward Surge Current@ t=8.3ms
Pd Power Dissipation
RθJA
TJ
Tstg
Thermal Resistance from Junction to Ambient
Junction temperature
Storage Temperature
Limit
30
21
100
0.5
100
1000
125
-55 ~ +150
Unit
V
V
mA
A
mW
/W
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Reverse breakdown voltage
V(BR)
IR=50μA
Reverse current
VR=10V
IR
VR=30V
Forward voltage
IF=10mA
VF
IF=100mA
Min Typ Max
30
10
50
0.38
0.60
Unit
V
μA
μA
V
V
www.cj-elec.com
1
B,Apr,2016

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