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JCET - SCHOTTKY BARRIER DIODE

Numéro de référence B2020W
Description SCHOTTKY BARRIER DIODE
Fabricant JCET 
Logo JCET 





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B2020W fiche technique
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
B2020W SCHOTTKY BARRIER DIODE
FEATURES
z Low Forward Voltage Drop
z Very Small SMD Package
APPLICATIONS
z Low Voltage Rectification
z High Efficiency DC/DC Conversion
z Switch Mode Power Supply
z Inverse Polarity Protection
z Low Power Consumption Applications
MARKING: SH
SOD-123
The marking bar indicates the cathode
Solid dot = Green molding compound device,if none,
the normal device.
MAXIMUM RATINGS ( Ta=25unless otherwise noted )
Symbol
Parameter
Value
VRRM
VRWM
VR(RMS)
IF
IFSM
PD
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
RMS Reverse Voltage
Continuous Forward Current
Non-repetitive Peak Forward Surge Current @ t=8.3ms
Power Dissipation
Note1
Note2
20
14
2
9
300
670
RΘJA
Thermal Resistance from Junction to Ambient
Note1
Note2
333
149
Tj Junction Temperature
125
Tstg Storage Temperature
-55~+150
1:Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
2:Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1cm2.
Unit
V
V
A
A
mW
mW
/W
/W
ELECTRICAL CHARACTERISTICS(Ta=25unless otherwise specified)
Parameter
Reverse breakdown voltage
Reverse current
Symbol
V(BR)
IR
Forward voltage
Total capacitance
*Pulse test: tp 300 μs; δ ≤ 0.02.
VF*
Ctot
Test conditions
IR=1mA
VR=10V
VR=20V
IF=1A
IF=2A
VR=4V,f=1MHz
Min Typ Max
20
80
100
0.45
0.55
120
Unit
V
μA
V
pF
www.cj-elec.com
1
D,Mar,2015

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