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Numéro de référence | 8N55 | ||
Description | N-Channel MOSFET Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
8N55
DESCRIPTION
·Drain Current ID= 8A@ TC=25℃
·Drain Source Voltage-
: VDSS= 550V(Min)
·Fast Switching Speed
APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25℃
550
±20
8
V
V
A
ID(puls)
Pulse Drain Current
32 A
Ptot Total Dissipation@TC=25℃
75 W
Tj Max. Operating Junction Temperature 150
℃
Tstg Storage Temperature Range
-55~150 ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
0.83 ℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 8N55 ] |
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