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PDF GB10NC60KD Data sheet ( Hoja de datos )
| Número de pieza | GB10NC60KD | |
| Descripción | STGB10NC60KD | |
| Fabricantes | STMicroelectronics | |
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STGB10NC60KD, STGD10NC60KD
STGF10NC60KD, STGP10NC60KD
10 A, 600 V short-circuit rugged IGBT
Features
■ Lower on voltage drop (VCE(sat))
■ Lower CRES / CIES ratio (no cross-conduction
susceptibility)
■ Very soft ultra fast recovery antiparallel diode
■ Short-circuit withstand time 10µs
Description
This IGBT utilizes the advanced PowerMESH™
process resulting in an excellent trade-off
between switching performance and low on-state
behavior.
Applications
■ High frequency motor controls
■ SMPS and PFC in both hard switch and
resonant topologies
■ Motor drives
TAB
3
1
D2PAK
TAB
3
1
DPAK
TAB
3
2
1
TO-220FP
3
2
1
TO-220
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STGB10NC60KDT4
GB10NC60KD
STGD10NC60KDT4
GD10NC60KD
STGF10NC60KD
GF10NC60KD
STGP10NC60KD
GP10NC60KD
Packages
D2PAK
DPAK
TO-220FP
TO-220
November 2009
Doc ID 11423 Rev 6
Packaging
Tape and reel
Tube
1/20
www.st.com
20
1 page  
STGx10NC60KD
2 Electrical characteristics
Electrical characteristics
(Tj =25°C unless otherwise specified)
Table 4. Static
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Collector-emitter
V(BR)CES breakdown voltage
(VGE= 0)
IC= 1mA
VCE(sat)
Collector-emitter saturation
voltage
VGE= 15V, IC= 5A
VGE= 15V, IC= 5A, Tj= 125°C
VGE(th) Gate threshold voltage
VCE= VGE, IC= 250µA
ICES
Collector cut-off current
(VGE = 0)
VCE= 600 V
VCE=600 V, Tj = 125°C
IGES
Gate-emitter leakage
current (VCE = 0)
VGE= ±20V
gfs(1) Forward transconductance VCE = 15V, IC= 5A
1. Pulse test: pulse duration < 300 µs, duty cycle < 2 %
600
4.5
V
2.2 2.5
1.8
V
V
6.5 V
150 µA
1 mA
±100 nA
15 S
Table 5. Dynamic
Symbol
Parameter
Cies
Coes
Cres
Qg
Qge
Qgc
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-emitter charge
Gate-collector charge
Test conditions
VCE = 25V, f = 1MHz,
VGE = 0
VCE = 390V, IC = 5A,
VGE = 15V,
(see Figure 19)
Min. Typ. Max. Unit
380 pF
- 46 - pF
8.5 pF
19 nC
- 5 - nC
9 nC
Doc ID 11423 Rev 6
5/20
5 Page 
STGx10NC60KD
3 Test circuits
Figure 18. Test circuit for inductive load
switching
Test circuits
Figure 19. Gate charge test circuit
Figure 20. Switching waveform
Figure 21. Diode recovery time waveform
Doc ID 11423 Rev 6
11/20
11 Page | ||
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