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4N35 Datasheet دیتاشیت PDF دانلود

دیتاشیت - Inchange Semiconductor - N-Channel MOSFET Transistor

شماره قطعه 4N35
شرح مفصل N-Channel MOSFET Transistor
تولید کننده Inchange Semiconductor 
آرم Inchange Semiconductor 


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4N35 شرح
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
4N35
DESCRIPTION
·Drain Current ID= 4A@ TC=25
·Drain Source Voltage-
: VDSS= 350V(Min)
·Fast Switching Speed
APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
VGS Gate-Source Voltage
ID Drain Current-continuous@ TC=25
350
±30
4
V
V
A
ID(puls)
Pulse Drain Current
16 A
Ptot Total Dissipation@TC=25
75 W
Tj Max. Operating Junction Temperature 150
Tstg Storage Temperature Range
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
3 /W
62.5 /W
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn

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