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NP120N04NUK fiches techniques PDF

Renesas - N-channel Power MOS FET

Numéro de référence NP120N04NUK
Description N-channel Power MOS FET
Fabricant Renesas 
Logo Renesas 





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NP120N04NUK fiche technique
Preliminary Data Sheet
NP120N04NUK
40 V – 120 A – N-channel Power MOS FET
Application: Automotive
R07DS1253EJ0100
Rev.1.00
Mar 30, 2015
Description
The NP120N04NUK is N-channel MOS Field Effect Transistors designed for high current switching applications.
Features
Super low on-state resistance
RDS(on) = 1.95 mΩ MAX. (VGS = 10 V, ID = 60 A)
Low Ciss: Ciss = 8300 pF TYP. (VDS = 25 V)
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
Lead Plating
Packing
NP120N04NUK-S18-AY *1 Pure Sn (Tin)
Tube 50 p/tube
Note: *1 Pb-free (This product does not contain Pb in the external electrode)
Package
TO-262 (MP-25SK)
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) *1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current *2
Repetitive Avalanche Energy *2
Tstg
IAR
EAR
Notes: *1 TC = 25°C, PW 10 μs, Duty Cycle 1%
*2 RG = 25 Ω, VGS = 20 V 0 V
Ratings
40
±20
±120
±480
288
1.8
175
–55 to +175
66
435
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.52 °C/W
83.3 °C/W
R07DS1253EJ0100 Rev.1.00
Mar 30, 2015
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