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6N80 fiches techniques PDF

Inchange Semiconductor - N-Channel MOSFET Transistor

Numéro de référence 6N80
Description N-Channel MOSFET Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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6N80 fiche technique
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
6N80
·FEATURES
·Drain Current ID= 6A@ TC=25
·Drain Source Voltage
: VDSS= 800V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 2Ω(Max)
·Avalanche Energy Specified
·Fast Switching
·Simple Drive Requirements
·DESCRITION
·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
VGS
ID
IDM
PD
Tj
Tstg
Drain-Source Voltage
800 V
Gate-Source Voltage-Continuous
±20
V
Drain Current-Continuous
6A
Drain Current-Single Plused
24 A
Total Dissipation @TC=25
150 W
Max. Operating Junction Temperature
150
Storage Temperature
-55~150
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c
Rth j-a
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
0.83 /W
40 /W
isc websitewww.iscsemi.cn
1
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