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PDF 6N80 Data sheet ( Hoja de datos )
| Número de pieza | 6N80 | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | nELL | |
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SEMICONDUCTOR
6N80 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
DESCRIPTION
(6A, 800Volts)
The Nell 6N80 is a three-terminal silicon
device with current conduction capability of 6A,
fast switching speed, low on-state resistance,
breakdown voltage rating of 800V ,and max.
threshold voltage of 5 volts.
They are designed for use in applications. such
as switched mode power supplies, DC to DC
converters, PWM motor controls, bridge circuits,
and general purpose switching applications .
FEATURES
RDS(ON) = 2.00Ω @ VGS = 10V
Ultra low gate charge(88nC max.)
Low reverse transfer capacitance
(CRSS = 57pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-220AB
(6N80A)
GDS
TO-220F
(6N80AF)
D (Drain)
G
(Gate)
PRODUCT SUMMARY
ID (A)
6
VDSS (V)
800
RDS(ON) (Ω)
2.00 @ VGS = 10V
QG(nC) max.
88
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C
TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
IAR=6A, RGS=50Ω, VGS=10V
EAS Single pulse avalanche energy(Note 2)
IAS=6A, L=25mH
dv/dt
Peak diode recovery dv/dt(Note 3)
TO-220AB
PD
Total power dissipation (Derate above 25°C)
TC=25°C
TO-220F
TJ Operation junction temperature
TSTG
TL
Storage temperature
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature..
2.IAS = 6A, VDD = 50V, L = 25mH, RGS = 27Ω, starting TJ=25°C.
3.ISD ≤ 7A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, starting TJ=25°C.
1.6mm from case
VALUE
UNIT
800
800 V
±30
6
3.8
A
24
6
16
mJ
480
2.0 V /ns
160 (1.28)
51 (0.41)
-55 to 150
-55 to 150
300
10 (1.1)
W(W/°C)
ºC
lbf.in (N.m)
www.nellsemi.com
Page 1 of 8
1 page  
SEMICONDUCTOR
6N80 Series RRooHHSS
Nell High Power Products
Fig.10 Maximum drain current vs. case
temperature
8
6
4
2
0
25
50
75 100 125 150
Case temperature, TC(°C)
Fig.11-1 Transient Thermal Response Curve for 6N80A
100
10-1
10-2
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
PDM
t1
t2
Notes:
1.Rth(j-c)(t)=0.78°C/W Max.
2.Duty factor, D=t1/t2
3.TJM-Tc=PDM×Rth(j-c)(t)
10-5
10-4
10-3
10-2
10-1
100
Square wave pulse duration , t1(sec.)
101
Fig.11-2 Transient Thermal Response Curve for 6N80AF
100
10-1
10-2
10-5
D = 0.5
0.2
0.1
0.05
0.02
0.01
Single pulse
PDM
t1
t2
Notes:
1.Rth(j-c)(t)=2.45°C/W Max.
2.Duty factor, D=t1/t2
3.TJM-Tc=PDM×Rth(j-c)(t)
10-4
10-3
10-2
10-1
100
Square wave pulse duration , t1(sec.)
101
www.nellsemi.com
Page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet 6N80.PDF ] | |
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