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PDF AWB7129 Data sheet ( Hoja de datos )
| Número de pieza | AWB7129 | |
| Descripción | Small-Cell Power Amplifier Module | |
| Fabricantes | ANADIGICS | |
| Logotipo |  |
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FEATURES
• InGaP HBT Technology
• -47 dBc ACPR @ + 10 MHz, +24.5 dBm
• 30 dB Gain
• High Efficiency
• Low Transistor Junction Temperature
• Internally matched for a 50 Ω System
• Low Profile Miniature Surface Mount Package;
Halogen Free and RoHS Compliant
• Multi-Carrier Capability
APPLICATIONS
• LTE, WCDMA and HSDPA Air Interfaces
• Picocell, Femtocell, Home Nodes
• Customer Premises Equipment (CPE)
• Data Cards and Terminals
AWB7129
925 MHz to 960 MHz
Small-Cell Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.1
14 Pin 7 mm x 7 mm x 1.3 mm
Surface Mount Module
PRODUCT DESCRIPTION
The AWB7129 is a highly linear, fully matched, power
amplifier module designed for picocell, femtocell, and
customer premises equipment (CPE) applications.
Its high power efficiency and low adjacent channel
power levels meet the extremely demanding needs
of small cell infrastructure architectures. Designed for
LTE, WCDMA, HSDPA air interfaces operating in the
925 MHz to 960 MHz band, the AWB7129 delivers
up to +24.5 dBm of LTE (E-TM1.1) power with an
ACPR of -47 dBc. It operates from a convenient
+4.2 V supply and provides 30 dB of gain. The
device is manufactured using an advanced InGaP
HBT MMIC technology offering state-of-the-art
reliability, temperature stability, and ruggedness.
The self-contained 7 mm x 7 mm x 1.3 mm surface
mount package incorporates RF matching networks
optimized for output power, efficiency, and linearity in
a 50 Ω system.
Vcc1 Vcc2
RF Input
Matching
Network
Bias
Network
Matching
Network
Power
Detector
Vref Detector
Output
Figure 1: Block Diagram
02/2014
RF Output
1 page  
AWB7129
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying logic low levels (see Operating
Ranges table) to the VREF voltage.
VREF
VCC1
RF Input
DETOUT
0.1uF
1000pF
TVS
Diode
100uF 10uF 0.1uF 1000pF
VREF
GND
GND
VCC1
RFIN
GND
VDET
1
2
3
4
5
6
7
0.1uF
100KΩ
4.7KΩ
AWB7129
GND
at slug
14 GND
13 GND
12 RFOUT
11 VCC2
10 GND
9 GND
8 GND
1000pF 0.1uF 10uF 100uF 100uF
RF Output
VCC2
TVS
Diode
Notes:
1. 10uF and 100uF capacitors are optional.
2. Applications that have large supply voltage transients may benefit from the
use of TVS diodes. For such applications, recommended TVS diodes are
SM05T1G or SMJ5.0A.
Figure 3: Application Circuit Schematic
5
PRELIMINARY DATA SHEET - Rev 1.1
02/2014
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet AWB7129.PDF ] | |
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